SL30N06D MOSFET Featuring Trench Technology and Fully Characterized Avalanche Current for Reliability
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SL30N06D is an N-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. Its high-density cell design ensures ultra-low RDS(ON), and it is fully characterized for avalanche voltage and current, offering good stability and uniformity with high EAS. The device features an excellent package for good heat dissipation and special process technology for high ESD capability, making it suitable for a wide variety of applications including power switching, hard switched, and high-frequency circuits, as well as uninterruptible power supplies.
Product Attributes
- Brand: SLKORMicro
- Model: SL30N06D
- Technology: Trench Technology
- Package: TO-252-2L
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| General Features | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Continuous Drain Current | ID | 30 | A | |||
| RDS(ON) | RDS(ON) | VGS=10V | 27 | 35 | m | |
| High density cell design | ||||||
| Fully characterized avalanche voltage and current | EAS | Note 5 | 72 | mJ | ||
| Excellent package for good heat dissipation | ||||||
| Special process technology for high ESD capability | ||||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | TC=25unless otherwise noted | 60 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TC=25 | 30 | A | ||
| Continuous Drain Current | ID (100) | TC=100 | 14 | A | ||
| Pulsed Drain Current | IDM | 60 | A | |||
| Maximum Power Dissipation | PD | 45 | W | |||
| Derating factor | 0.3 | W/ | ||||
| Single pulse avalanche energy | EAS | Note 5 | 72 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction-to-Case | RJC | Note 2 | 3.3 | /W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | - | 1 | A | |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | - | 100 | nA | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 1.2 | 1.6 | 2.5 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=30A | 27 | 35 | m | |
| Forward Transconductance | gFS | VDS=5V,ID=5A | 11 | - | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | 500 | - | PF | ||
| Output Capacitance | Coss | 60 | - | PF | ||
| Reverse Transfer Capacitance | Crss | VDS=30V,VGS=0V, F=1.0MHz | 25 | - | PF | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | 5 | - | nS | ||
| Turn-on Rise Time | tr | 2.6 | - | nS | ||
| Turn-Off Delay Time | td(off) | 16.1 | - | nS | ||
| Turn-Off Fall Time | tf | VDD=30V,ID=2A,RL=6.7, VGS=10V,RG=3 | 2.3 | - | nS | |
| Total Gate Charge | Qg | 47 | - | nC | ||
| Gate-Source Charge | Qgs | 6 | - | nC | ||
| Gate-Drain Charge | Qg d | VDS=30V,ID=4.5A, VGS=10V | 14 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=30A | 1.2 | - | V | |
| Diode Forward Current | IS | Note 2 | - | 20 | A | |
| Reverse Recovery Time | trr | 35 | - | nS | ||
| Reverse Recovery Charge | Qrr | TJ = 25C, IF =30A, di/dt = 100A/s(Note3) | 53 | - | nC | |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina