Low Input Capacitance N Channel Enhancement Mode Transistor Slkor MMBF170L in Compact SOT 23 Package

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Product Description

Product Overview

N-Channel Enhancement Mode Field Effect Transistor designed for low on resistance, low gate threshold voltage, and low input capacitance. Features ESD protection up to 2KV. Packaged in a SOT-23 plastic package.

Product Attributes

Brand: slkormicro
Model: MMBF170L
Marking Code: 6Z
Package: SOT-23

Technical Specifications

Parameter	Symbol	Value	Unit	Min.	Max.
Drain-Source Breakdown Voltage	BVDSS	60	V	60	-
Zero Gate Voltage Drain Current	IDSS	-	µA	-	1
Gate Source Leakage Current	IGSS	-	µA	-	±10
Gate Threshold Voltage	VGS(th)	-	V	1	2.5
Static Drain Source On-Resistance	RDS(ON)	-	Ω	-	3
Static Drain Source On-Resistance	RDS(ON)	-	Ω	-	4
Forward Transconductance	gfs	80	mS	80	-
Input Capacitance	Ciss	-	pF	-	50
Output Capacitance	Coss	-	pF	-	25
Reverse Transfer Capacitance	Crss	-	pF	-	5
Drain-Source Voltage	VDSS	60	V
Gate-Source Voltage	VGSS	±20	V
Drain Current (Continuous)	ID	300	mA
Drain Current (Pulse Width ≤ 10 µs)	IDM	800	mA
Total Power Dissipation	Ptot	350	mW
Operating and Storage Temperature Range	Tj, Tstg	-55 to 150	°C	-55	150