Power MOSFET VBsemi Elec VBQA1102N N Channel 100 Volt Drain Source Breakdown Voltage for DC DC Conversion

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Product Description

Product Overview

The VBQA1102N is an N-Channel 100-V (D-S) Trench Power MOSFET designed for high-performance applications. It features a low thermal resistance package, a high junction temperature rating of 175 C, and is 100% Rg tested. This MOSFET is ideal for isolated DC/DC converters and other power management solutions requiring robust and efficient switching.

Product Attributes

Brand: VBsemi
Product Type: N-Channel MOSFET
Compliance: RoHS Compliant
Package Type: DFN5X6

Technical Specifications

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Unit
Static Characteristics
Drain-source breakdown voltage	VDS	VGS = 0 V, ID = 250 A	100	-	-	V
VDS temperature coefficient		ID = 10 mA	-	81	-	mV/C
Gate-source threshold voltage	VGS(th)	VDS = VGS, ID = 250 A	3	-	5	V
VGS(th) temperature coefficient		ID = 250 A	-	-7.5	-	mV/C
Gate-source leakage	IGSS	VDS = 0 V, VGS = 20 V	-	-	100	nA
Zero gate voltage drain current	IDSS	VDS = 100 V, VGS = 0 V	-	-	1	A
		VDS = 100 V, VGS = 0 V, TJ = 70 C	-	-	15
On-state drain current	ID(on)	VDS 10 V, VGS = 10 V	40	-	-	A
Drain-source on-state resistance	RDS(on)	VGS = 10 V, ID = 10 A	-	0.0170	-
		VGS = 7.5 V, ID = 10 A	-	0.0200	-
Forward transconductance	gfs	VDS = 15 V, ID = 10 A	-	46	-	S
Dynamic Characteristics
Input capacitance	Ciss	VDS = 50 V, VGS = 0 V, f = 1 MHz	-	1470	-	pF
Output capacitance	Coss		-	132	-
Reverse transfer capacitance	Crss		-	11.2	-
Total gate charge	Qg	VDS = 50 V, VGS = 10 V, ID = 10 A	-	20	-	nC
		VDS = 50 V, VGS = 7.5 V, ID = 10 A	-	15	-
Gate-source charge	Qgs		-	6.45	-
Gate-drain charge	Qg d		-	3.5	-
Output charge	Qoss	VDS = 50 V, VGS = 0 V	-	22	-
Gate resistance	Rg	f = 1 MHz	0.2	0.76	1.4
Switching Characteristics (VDD = 50 V, RL = 5 , ID 10 A, VGEN = 10 V, Rg = 1 )
Turn-on delay time	td(on)		-	12	24	ns
Rise time	tr		-	5	10
Turn-off delay time	td(off)		-	19	38
Fall time	tf		-	5	10
Switching Characteristics (VDD = 50 V, RL = 5 , ID 10 A, VGEN = 7.5 V, Rg = 1 )
Turn-on delay time	td(on)		-	15	30	ns
Rise time	tr		-	6	12
Turn-off delay time	td(off)		-	19	38
Fall time	tf		-	5	10
Drain-Source Body Diode Characteristics
Continuous source-drain diode current	IS	TC = 25 C	-	-	56.8	A
Pulse diode forward current	ISM		-	-	80
Body diode voltage	VSD	IS = 5 A, VGS = 0 V	-	0.78	1.1	V
Body diode reverse recovery time	trr	IF = 10 A, di/dt = 100 A/s, TJ = 25 C	-	43	86	ns
Body diode reverse recovery charge	Qrr		-	72	144	nC
Reverse recovery fall time	ta		-	33	-	ns
Reverse recovery rise time	tb		-	10	-