P Channel 30 Volt MOSFET VBsemi Elec IRF9328TRPBF VB Trench Power Device for Computing Applications

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Product Description

Product Overview

The IRF9328TRPBF-VB is a P-Channel 30-V (D-S) Trench Power MOSFET designed for load switching applications in notebook and desktop PCs. It features 100% Rg and UIS tested, offering high performance and reliability.

Product Attributes

Brand: VBsemi
Certifications: Halogen-free According to IEC 61249-2-21 Available
Origin: Taiwan

Technical Specifications

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Unit
Drain-Source Breakdown Voltage	VDS	VGS = 0 V, ID = - 250 A	- 30			V
VDS Temperature Coefficient	VDS/TJ	ID = - 250 A		- 31		mV/C
Gate-Source Threshold Voltage	VGS(th)	VDS = VGS, ID = - 250 A	- 1.0	- 3.0		V
VGS(th) Temperature Coefficient	VGS(th)/TJ	VDS = VGS, ID = - 250 A		- 5.5		mV/C
Gate-Source Leakage	IGSS	VDS = 0 V, VGS = 25 V			100	nA
Zero Gate Voltage Drain Current	IDSS	VDS = - 30 V, VGS = 0 V			- 1 A
Zero Gate Voltage Drain Current	IDSS	VDS = - 30 V, VGS = 0 V, TJ = 55 C			- 5	A
On-State Drain Current	ID(on)	VDS - 10 V, VGS = - 10 V	- 30			A
Drain-Source On-State Resistance	RDS(on)	VGS = - 10 V, ID = - 10 A		0.011
Drain-Source On-State Resistance	RDS(on)	VGS = - 4.5 V, ID = - 7 A		0.012
Forward Transconductance	gfs	VDS = - 10 V, ID = - 10 A	23			S
Input Capacitance	Ciss	VDS = - 15 V, VGS = 0 V, f = 1 MHz		1960		pF
Output Capacitance	Coss	VDS = - 15 V, VGS = 0 V, f = 1 MHz		380		pF
Reverse Transfer Capacitance	Crss	VDS = - 15 V, VGS = 0 V, f = 1 MHz		325		pF
Total Gate Charge	Qg	VDS = - 15 V, VGS = - 10 V, ID = - 10 A		43	65	nC
Gate-Source Charge	Qgs	VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A		22	33	nC
Gate-Drain Charge	Qgd	VDS = - 15 V, VGS = - 10 V, ID = - 10 A		11		nC
Gate Resistance	Rg	f = 1 MHz		0.3	1.3
Turn-On Delay Time	td(on)	VDD = - 15 V, RL = 3 , ID - 5 A, VGEN = - 10 V, Rg = 1		11	22	ns
Rise Time	tr	VDD = - 15 V, RL = 3 , ID - 5 A, VGEN = - 10 V, Rg = 1		13	25	ns
Turn-Off DelayTime	td(off)	VDD = - 15 V, RL = 3 , ID - 5 A, VGEN = - 10 V, Rg = 1		32	50	ns
Fall Time	tf	VDD = - 15 V, RL = 3 , ID - 5 A, VGEN = - 10 V, Rg = 1		9	18	ns
Turn-On Delay Time	td(on)	VDD = - 15 V, RL = 3 , ID - 5 A, VGEN = - 4.5 V, Rg = 1		44	70	ns
Rise Time	tr	VDD = - 15 V, RL = 3 , ID - 5 A, VGEN = - 4.5 V, Rg = 1		100	160	ns
Turn-Off DelayTime	td(off)	VDD = - 15 V, RL = 3 , ID - 5 A, VGEN = - 4.5 V, Rg = 1		28	50	ns
Fall Time	tf	VDD = - 15 V, RL = 3 , ID - 5 A, VGEN = - 4.5 V, Rg = 1		15	30	ns
Continuous Source-Drain Diode Current	IS	TC = 25 C		- 4.6		A
Pulse Diode Forward Current	ISM			- 50		A
Body Diode Voltage	VSD	IS = - 2 A, VGS = 0 V	- 0.75	- 1.2		V
Body Diode Reverse Recovery Time	trr	IF = - 2 A, dI/dt = 100 A/s, TJ = 25 C		28	45	ns
Body Diode Reverse Recovery Charge	Qrr	IF = - 2 A, dI/dt = 100 A/s, TJ = 25 C		20	40	nC
Reverse Recovery Fall Time	ta	IF = - 2 A, dI/dt = 100 A/s, TJ = 25 C		13		ns
Reverse Recovery Rise Time	tb	IF = - 2 A, dI/dt = 100 A/s, TJ = 25 C		15		ns