Power Electronics Diode Wolfspeed C3D08065A Silicon Carbide 650 Volt 8 Amp for Boost and PFC Circuits
Product Overview
This 3rd Generation 650 V, 8 A Silicon Carbide (SiC) Schottky Barrier diode, model C3D08065A, offers superior performance compared to Silicon (Si)-based solutions, enabling power electronics systems to achieve higher efficiency standards, increased frequencies, and enhanced power densities. Its SiC Schottky Barrier diode characteristics provide a low forward voltage drop with a positive temperature coefficient and zero reverse recovery current/forward recovery voltage, resulting in temperature-independent switching behavior. These diodes can be easily paralleled without concern for thermal runaway, and when combined with reduced cooling requirements and improved thermal performance, they contribute to lower overall system costs. Key applications include Industrial Switched Mode Power Supplies, Uninterruptible & AUX Power Supplies, Boost for PFC & DC-DC Stages, and Solar Inverters.
Product Attributes
- Brand: Wolfspeed
- Material: Silicon Carbide (SiC)
- Registered Trademarks: Wolfspeed, Wolfstreak logo
- Trademark: Wolfspeed logo
- Origin: USA
- Certifications: RoHS Compliant, REACh Compliant
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Conditions | Notes |
|---|---|---|---|---|---|
| Maximum Ratings (TC = 25C Unless Otherwise Specified) | |||||
| Repetitive Peak Reverse Voltage | VRRM | 650 | V | DC Blocking Voltage | |
| Continuous Forward Current | IF | 24 | A | TJ = 25 C | Fig. 3 |
| 11 | A | TJ = 135 C | |||
| 8 | A | TJ = 152 C | |||
| Repetitive Peak Forward Surge Current | IFRM | 37.5 | A | TC = 25 C, tp = 10 ms, Half Sine Wave | |
| 25.5 | A | TC = 110 C, tp = 10 ms, Half Sine Wave | |||
| Non-Repetitive Forward Surge Current | IFSM | 71 | A | TC = 25 C, tp = 10 ms, Half Sine Wave | Fig. 8 |
| 60 | A | TC = 110 C,tp = 10 ms, Half Sine Wave | |||
| Non-Repetitive Peak Forward Surge Current | IF,Max | 650 | A | TC = 25 C, tp = 10 s, Pulse | |
| 530 | A | TC = 110C, tp = 10 s, Pulse | |||
| Power Dissipation | Ptot | 107 | W | TJ = 25 C | Fig. 4 |
| 46.5 | W | TJ = 110 C | |||
| Electrical Characteristics | |||||
| Forward Voltage | VF | 1.5 | V | IF = 8 A, Tj = 25 C | Fig. 1 |
| 2.1 | V | IF = 8 A, Tj = 175 C | |||
| Reverse Current | IR | 10 | A | VR = 650 V, Tj = 25 C | Fig. 2 |
| 12 | A | VR = 650 V, Tj = 175 C | |||
| Total Capacitive Charge | QC | 20 | nC | VR = 650 V, Tj = 25 C | Fig. 5 |
| Total Capacitance | C | 395 | pF | VR = 0 V, Tj = 25 C, f = 1 MHz | Fig. 6 |
| 37 | pF | VR = 200 V, Tj = 25 C, f = 1 MHz | |||
| 32 | pF | VR = 400 V, Tj = 25 C, f = 1 MHz | |||
| Capacitance Stored Energy | EC | 3.0 | J | VR = 400 V | Fig. 7 |
| Thermal & Mechanical Characteristics | |||||
| Thermal Resistance, Junction to Case (Typical) | R, JC (TYP) | 1.4 | C / W | ||
| Junction Temperature | Tj | -55 to +175 | C | ||
| Case & Storage Temperature | Tc | -55 to +175 | C | ||
| Mounting Torque | 1 | Nm | M3 Screw | ||
| 8.8 | lbf-in | 6-32 Screw | |||
| Electrostatic Discharge (ESD) Classifications | |||||
| Human Body Model | HBM | Class 3B ( 8000 V) | |||
| Charge Device Model | CDM | Class C3 ( 1000 V) | |||
| Product Model | |||||
| Part Number | C3D08065A | ||||
| Package Type | TO-220-2 | ||||
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.