Self-Healing Dielectric MOS Capacitor 330 pF 50V Single Layer Chip For High Reliability RF Systems
MOQ:
10 Pieces
Delivery Time:
5-7 working days for stock, 3-4 weeks for production
Brand:
Hoan
Product Description
Self-Healing Dielectric Single Layer MOS Capacitor — 330 pF / 50 V (HACC331S50V150)
What Is a Self-Healing Dielectric MOS Capacitor?
The HACC331S50V150 is a single layer MOS (metal-oxide-semiconductor) capacitor that uses a thermally grown silicon dioxide (SiO2) dielectric on a float-zone silicon substrate. Its self-healing dielectric design isolates a localized breakdown site so that a transient overvoltage does not develop into a permanent short circuit. It is a wire-bondable RF capacitor rated 330 pF ±10% at 50 V DC in a 0.50 × 0.50 × 0.15 mm chip, and it is also known as a single layer ceramic capacitor (SLC) or wire bondable capacitor.
Key Specifications (typical, 25 °C)
| Nominal capacitance | 330 pF ±10% (±5% available) |
| Rated DC voltage | 50 V |
| Dielectric withstanding voltage | >125 V DC (250% rated) |
| Self-healing feature | Localized breakdown site isolation |
| Dielectric | Thermal SiO2, 300 nm |
| Substrate | Float-zone silicon, >1000 Ω·cm |
| Intrinsic ESL | <0.05 nH |
| Self-resonant frequency | >4 GHz (with 0.5 mm bond wire) |
| Q factor @ 1 MHz | >2000 |
| TCC | +35 ppm/°C |
| Operating temperature | -55 °C to +125 °C |
| Chip dimensions | 0.50 × 0.50 × 0.15 mm |
| Metallization | Top TiW-Au (2.5 µm min), backside TiW-Pt-Au (1.0 µm min) |
| Moisture sensitivity level | MSL 1 |
| RoHS | Compliant (EU 2015/863) |
MOS Capacitor vs. MLCC vs. Standard SLC
| Parameter | This MOS capacitor | MLCC (0402) |
| Construction | Single layer, vertical current path | Multilayer stack |
| Intrinsic ESL | <0.05 nH | 300-500 pH |
| Capacitance vs. DC bias | Stable up to rated voltage | Can drop at rated voltage (Class II) |
| Breakdown behavior | Self-healing dielectric design | Permanent failure |
| Mounting | Wire bond / eutectic die attach | SMD solder |
Typical Applications
- High-reliability RF power amplifier matching and DC blocking
- Hybrid microcircuits exposed to repetitive voltage transients
- Industrial RF generators and power supplies
- Medical RF equipment
- Telecom and infrastructure radio front-ends
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Company
HongAn Microwave Co., Ltd.
Location
F7, Building 2, Xinkai Industrial Park, Jinye 2nd Road, High-tech Zone, Xi'an
Contact Person
Wang