High Thermal Conductivity Silicon Substrate MOS Capacitor 220 pF 50V Single Layer Chip For RF Power Amplifiers
MOQ:
10 Pieces
Delivery Time:
5-7 working days for stock, 3-4 weeks for production
Brand:
Hoan
Product Description
High Thermal Conductivity Silicon Substrate MOS Capacitor — 220 pF / 50 V (HACC221S50V500)
What Is a High Thermal Conductivity Silicon Substrate MOS Capacitor?
The HACC221S50V500 is a single layer MOS capacitor fabricated on a high thermal conductivity silicon substrate with a thermally grown SiO2 dielectric. It is designed to conduct heat away from the active die instead of trapping it, which keeps the capacitor cooler and more stable during continuous RF power operation. It is a wire-bondable RF capacitor rated 220 pF ±10% at 50 V DC in a 0.50 × 0.50 × 0.15 mm chip.
Key Specifications (typical, 25 °C)
| Nominal capacitance | 220 pF ±10% (±5% available) |
| Rated DC voltage | 50 V |
| Substrate thermal conductivity | >140 W/m·K |
| Thermal resistance (junction to carrier) | <15 K/W |
| Dielectric | Thermal SiO2, 300 nm |
| Substrate | High thermal conductivity silicon |
| Intrinsic ESL | <0.05 nH |
| Self-resonant frequency | >6 GHz (with 0.5 mm bond wire) |
| Q factor @ 1 MHz | >2000 |
| TCC | +35 ppm/°C |
| Operating temperature | -55 °C to +125 °C |
| Chip dimensions | 0.50 × 0.50 × 0.15 mm |
| Metallization | Top TiW-Au (2.5 µm min), backside TiW-Pt-Au (1.0 µm min) |
| Moisture sensitivity level | MSL 1 |
| RoHS | Compliant (EU 2015/863) |
Thermal Path Comparison
| Parameter | This MOS capacitor | Ceramic carrier capacitor |
| Substrate thermal conductivity | >140 W/m·K | Typically 2-30 W/m·K |
| Junction-to-carrier thermal resistance | <15 K/W | Higher, depends on carrier |
| Heat path | Silicon substrate to backside metal | Limited by insulator |
| Capacitance vs. DC bias | Stable up to rated voltage | Can drop (Class II) |
Typical Applications
- RF power amplifier decoupling and DC blocking
- Phased-array transmit and receive modules
- High-density multi-chip RF modules
- 5G small cell and backhaul radio front-ends
- Industrial RF heating and power conversion equipment
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Company
HongAn Microwave Co., Ltd.
Location
F7, Building 2, Xinkai Industrial Park, Jinye 2nd Road, High-tech Zone, Xi'an
Contact Person
Wang