Sub-Degree Phase Matching MOS Capacitor 100 pF 30V Chip for Beamforming Phased Array Modules
HPM101S30V100 Sub-Degree Phase Matching MOS Capacitor — 100 pF 30V for Beamforming
In short: The HPM101S30V100 is a 100 pF, 30 V single-layer MOS capacitor built on high-resistivity float-zone silicon with a thermally grown SiO2 dielectric. It is specified for sub-degree phase matching across an array, so that individual elements keep a consistent phase response in beamforming front-ends. A gradient impedance matching layer blends the transition between the electrode interface and the surrounding transmission line, which keeps that phase consistency over a wide band. Custom capacitance values and matching layers are available.
Key Facts
| Item | Value |
| Brand | Hoan |
| Model | HPM101S30V100 |
| Category | MOS Capacitors |
| Capacitance | 100 pF ±5% (±2% on request) |
| Rated DC Voltage | 30 V |
| Dielectric | Thermal SiO2, paraelectric (300 nm) |
| Phase Matching | Sub-degree, element-to-element |
| Impedance Interface | Gradient impedance matching layer |
| Usable Bandwidth | DC to 18 GHz (typical) |
| Termination | Wire bond or flip-chip micro-bump |
| Chip Size | 0.50 x 0.50 x 0.15 mm |
| Operating Temperature | -55 °C to +125 °C |
| Place of Origin | Shaanxi, China |
| Certification | ISO 9001:2015, RoHS |
| MOQ | 10 pieces |
| Lead Time | 5-7 working days for stock, 3-4 weeks for production |
Gradient Impedance Matching Layer
An abrupt change in electrode or interface impedance reflects part of the signal and adds a frequency-dependent phase tilt. The HPM101S30V100 uses a gradient impedance matching layer, a stepped transition fabricated between the dielectric interface and the electrode, that spreads that change across several intermediate impedance levels instead of one step. The result is a smoother impedance path with lower reflection and a flatter phase response across the working band.
- Stepped impedance transition instead of a single abrupt step
- Lower reflection and flatter phase across the band
- Compatible with wire-bond and flip-chip (micro-bump) assembly
Applications
- Phased-array and beamforming front-end modules
- Digital beamforming receive and transmit channels
- 5G and 6G antenna array tiles
- Satellite communication phased arrays
- Wideband RF coupling and DC blocking between channels
- Test and measurement front-ends needing matched phase between ports
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