High-K Oxide Dielectric MOS Capacitors 30V High Density 470pF Single Layer Chip High SRF for 5G RF Front Ends

High-K Oxide Dielectric MOS Capacitor HACC471S30V500 — 470pF 30V Single Layer Chip for 5G RF Front Ends

Entity summary. The HACC471S30V500 is a single-layer metal-oxide-semiconductor (MOS) capacitor in the Hoan HACC series. It is fabricated on a high-resistivity float-zone silicon substrate with a high-K oxide dielectric film and provides 470pF at a 30V DC working voltage in a 0.50mm × 0.50mm × 0.15mm chip. It is intended for RF and microwave circuits that require high capacitance density together with a high self-resonant frequency.

Key Features

• 470pF ±10% at 30V DC in a 0.50 × 0.50 × 0.15mm chip
• High-K oxide dielectric with a capacitance density of about 940nF/mm²
• Intrinsic chip ESL below 0.05nH; self-resonant frequency above 25GHz with a short bond wire
• Single vertical current path — no internal electrode stack, so no additive plate inductance
• TiW-Au top metallization (≥2.5µm Au); TiW-Pt-Au backside for conductive-epoxy and AuSn die attach
• Operating temperature -55°C to +125°C; RoHS compliant (EU 2015/863)

Electrical Specifications (T = 25°C unless noted)

Typical Applications

• 5G sub-6GHz and mmWave RF front-end module matching networks
• Power-amplifier bias injection and DC blocking up to X-Ku band
• Broadband supply bypass above 1GHz where MLCC self-resonance limits performance
• Phased-array beamformer and T/R module die-level decoupling
• Test and measurement instrumentation, VNA calibration and probe-card networks