Sapphire Substrate

Product Overview Sapphire ITO coated substrate is a high-performance material consisting of a single-crystal sapphire (Al₂O₃) wafer coated with a transparent conductive Indium Tin Oxide (ITO) thin film. This combination integrates: The exceptional mechanical strength and thermal stability of sapphire The excellent electrical conductivity and optical transparency of ITO Compared with conventional glass-based ITO substrates, sapphire-based solutions provide superior durability,

Product Overview Flame-fusion sapphire crystal, also known as Verneuil-grown sapphire, is a high-purity synthetic single crystal produced through a continuous melting and crystallization process. The Morgan pink color is achieved by carefully introducing trace elements during growth, resulting in a soft, elegant pink tone with excellent optical clarity. This material combines aesthetic appeal with outstanding physical and chemical properties, making it ideal for both

Synthetic Ruby Laser Rods (Cr:Al₂O₃) for Laser Equipment Length up to 200 mm Product Overview: Our synthetic ruby laser rods are grown using the Verneuil (Flame Fusion) method, a mature and widely adopted crystal growth process for laser-grade ruby. This method enables good crystal homogeneity, controlled chromium (Cr³⁺) dopant distribution, and reliable optical performance suitable for commercial and industrial laser applications. Verneuil-grown ruby crystals exhibit high

Sapphire custom plates with a single-side polished surface are high-precision optical and structural components manufactured from premium single-crystal aluminum oxide (Al₂O₃). Owing to their exceptional hardness, excellent optical transmission, high thermal resistance, and chemical stability, sapphire plates have become indispensable in advanced optical systems, semiconductor processing, high-end industrial equipment, and scientific instrumentation. The single-side polished

Product Overview TGV (Through Glass Via) technology, also known as glass through-hole technology, is a vertical electrical interconnection technique that penetrates glass substrates. It enables vertical electrical connections on glass substrates, achieving high-density interconnections between chips, as well as between chips and substrates. While TSV (Through Silicon Via) technology is used for interposers in silicon-based substrates, TGV serves the same purpose in glass

Sapphire Wafer Monocrystal Al2O3 DSP SSP 2inch 4inch 6inch 8inch 12inch A plane C plane Description: Sapphire substrates are widely used in the production of III-V nitrides, superconductors, and magnetic epitaxial films due to their low lattice mismatch and excellent physical and chemical stability. They are extensively employed in non-polar and semi-polar epitaxial growth of materials such as GaN, ZnO, AlN, various semiconductor thin film epitaxial growth processes, Silicon

Sapphire wafer 2inch C-plane(0001) DSP SSP 99,999% Monocrystalline Al2O3 LEDS Semiconductor Description of Sapphire Wafer: The sapphire wafer is a common substrate for preparing III-V nitrides, superconductors, and magnetic epitaxial films due to its low lattice mismatch and good physical and chemical stability. It is widely used in GaN/ZnO/AIN non-polar and half-order epitaxial growth, various semiconductor thin films epitaxial growth, Silicon On Sapphire, optical windows,

Through glass vias (TGV) for JGS1 JGS2 sapphire corning glass for Sensors Manufacturing and Packaging Product abstract Our Through-Glass Vias (TGV) technology offers an innovative solution for the manufacturing and packaging of sensors, utilizing premium materials such as JGS1, JGS2, sapphire, and Corning glass. This technology is designed to enhance the performance, reliability, and integration capabilities of sensors used across various industries including automotive,

2inch 50.8mm C Miscut A 4 Degree Sapphire Wafers Thickness 0.175mm/0.3mm/0.4mm/0.5mm Dsp 2 Inch C Plane Polished Sapphire Wafers Crystal Substrates The specifications of 2inch sapphire wafer substrate Material: High Purity >99.99%, single crystal Al2O3 Dimension: 50.8 mm +/- 0.1 mm Thickness: 430 um +/- 25 um for SSP and 400 um +/- 25 um for DSP (other thickness available upon request) Lattice Parameter: a=4.785 A, c=12.991 A Density: 3.98 g/cm3 Orientation: C plane (0001) to

8inch Dia200mm C-Plane Al2O3 99.999% Sapphire Single Crystal Wafer Carrier Substrate 1sp 2spProduct Description:Sapphire Substrate is a single crystal material made of Al2O3 99.999% with a surface orientation of ±0.5° and a flatness of λ/10@633nm. It is available in thicknesses of 0.5-2mm. It is widely used for sapphire windows of 2inch, 4inch and 6inch.Sapphire Substrate has excellent thermal, electrical and optical properties, making it ideal for sapphire windows. It is

Product Overview 12 inch sapphire wafers are ultra-large diameter single-crystal sapphire substrates manufactured for advanced semiconductor and optoelectronic applications. Compared with traditional 2–6 inch sapphire wafers, 12 inch sapphire wafers significantly improve production efficiency, material utilization, and device uniformity, making them an ideal choice for next-generation LED, power electronics, and advanced packaging technologies. Our 12 inch sapphire wafers are

High Precision 50.8mm 2inch 0.1mm 0.43mm Thickness Quality Sapphire Wafer Orientation A-Plane M-Plane Product Description: Sapphire Substrate is a high-precision product for different size of sapphire substrate, including 2inch, 4inch and 6inch. It has clear aperture of over 90%, surface roughness of Ra less than 0.5nm, TTV of less than 5μm, perpendicularity of 3 arc sec and surface orientation of ±0.5°. It is available in both C-plane and M-plane, and A-plane is optional.

6 Inch 153mm 156mm 159mm Thickness 350um 0.5mmt Sapphire Carrier Substrate Wafer SSP DSP Product Description: Sapphire bonding sheet is used for thinning and polishing of gallium arsenide wafers Due to the weight and pressure imposed by the equipment, the traditional gallium arsenide wafer thinning process is liable to cause wafer fragmentation, or the surface stress accumulates to form a coil during the thinning process, and the product performance is seriously lost. The

C-axis (0001) orientation 3inch diameter 76.2mm sapphire wafer sapphire glass sapphire watch glass ar sapphire crystal sapphire wafer price 2inch 3inch 4inch 6inch 8inch 12inch 3Inch C-axis 76.2mm Al2O3 Sapphire Crystal Wafers 0.5mm Custom Sapphire Glass substrates TYPICAL CHOICES FOR PART ORIENTATION: Why Sapphire? Zero Degree: The direction of view is parallel to the optical axis of the crystal 90 Degree: The direction of view is perpendicular to the optical axis of the

Product Overview The 310 × 310 mm sapphire heat dissipation substrate is a large-size thermal and insulating substrate made from high-purity single crystal sapphire. It offers excellent thermal conductivity, electrical insulation, high-temperature resistance, chemical stability, and mechanical strength. This product is suitable for high-power electronic devices, LED packaging, semiconductor processing carriers, optoelectronic components, laser modules, and precision thermal

Product Overview G.657.A2 bending insensitive single-mode optical fiber is specially designed for modern high-speed optical communication networks. It offers excellent bend resistance, low attenuation, and strong compatibility with existing fiber systems. Compared with conventional single-mode fibers, G.657.A2 fiber maintains stable transmission performance even under small bending radius conditions, making it ideal for FTTH, indoor cabling, access networks, data centers, and

Product Introduction Sapphire etched wafers are manufactured using high-purity single-crystal sapphire (Al₂O₃) substrates, processed through advanced photolithography combined with wet etching and dry etching technologies. The products feature highly uniform micro-structured patterns, excellent dimensional accuracy, and outstanding physical and chemical stability, making them suitable for high-reliability applications in microelectronics, optoelectronics, semiconductor

Flame Fusion Method Sapphire for Luxury Diamond Applications The Introduction of The Verneuil Process (Flame Fusion): The Verneuil Process(Flame Fusion) is one of the earliest methods for producing synthetic sapphire is the Verneuil process, also known as flame fusion. The principle of this synthetic gemstone production method is based on the high temperature generated by a hydrogen–oxygen flame, which can reach up to 2,900°C. During the process, powdered raw materials of the

Product Overview Fused Quartz Windows are precision optical components made from high-purity fused silica, engineered for superior optical clarity, high thermal stability, and exceptional resistance to chemical corrosion. These transparent discs serve as protective barriers or optical transmission interfaces in demanding scientific, industrial, and semiconductor environments. With excellent transmittance across a wide spectral range from ultraviolet (UV) to infrared (IR),

4inch 6inch A Plane Sapphire Wafers Single Crystal for Optical Description of Sapphire Wafers: Sapphire wafers are single-crystal aluminum oxide (Al₂O₃) substrates renowned for their exceptional hardness, thermal stability, chemical resistance, and optical transparency. As one of the most durable and stable crystalline materials available, sapphire serves as a critical substrate and protective material in advanced semiconductor, optoelectronic, and optical applications.With a