HongAn Microwave Co., Ltd.
                                                                                                           
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China High Capacitance Density MOS Capacitors 30V Single Layer 1000 pF Capacitor Chip For RF Microwave Circuits for sale

High Capacitance Density MOS Capacitors 30V Single Layer 1000 pF Capacitor Chip For RF Microwave Circuits

Price: Negotiable
MOQ: 10 Pieces
Delivery Time: 5-7 working days for stock, 3-4 weeks for production

1000pF 30V single-layer MOS capacitor with 500nF/mm² density, Q>2000, low ESR, and SiO₂ dielectric. 0.50x0.50mm chip with gold metallization for RF impedance matching, bypass, and filter applications from 100MHz to 10GHz.

China Wire Bond Optimized 330 pF Capacitor Ultra Miniature Single Sided Bordered SLC Capacitor For mmWave for sale

Wire Bond Optimized 330 pF Capacitor Ultra Miniature Single Sided Bordered SLC Capacitor For mmWave

Price: Negotiable
MOQ: 10 Pieces
Delivery Time: 3-5 working days for stock, 2-4 weeks for production

The HACC331S15V250 is a 330pF 25V single-sided bordered Single Layer Ceramic Capacitor (SLC) in an ultra-miniature 15mil (0.38×0.38×0.15mm) footprint. Featuring an ultra-thick 4.0μm minimum TiW-Au top metallization for superior wire bond reliability and a TiW-Pt-Au bottom electrode with platinum diffusion barrier, this capacitor delivers COG/NPO-class temperature stability across -55°C to +125°C. Optimized for millimeter-wave DC blocking and RF bypass from 100MHz to 35GHz in space-constrained GaAs/GaN MMIC and silicon RFIC assemblies.

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