8inch Dia100mm 0001 Sapphire Wafer 1sp Or 2sp For Semiconductor Carrier
8inch 1.0thickness dia100mm 0001 sapphire wafer 1sp or 2sp
4inch Sapphire Wafer C-Plane Single or Double Side Polished Al2O3 Single Crystal
4inch Dia100mm A plane Single Crystal Sapphire Wafer
2inch Dia50mm C axis Single Crystal Sapphire Wafer Sapphire Substrates
8inch Dia 159mm Single Crystal Sapphire Wafer For Epi - Ready Carrier
4inch/ 5inch/ 6inch/ 6.125inch/8inch c-plane R-axis (1-102) (10-10) sapphire wafer,dia200mm sapphire substrates ,2-6inch C-axis double side polished sapphire wafer for led epi-ready,sapphire substrates, Al2O3 crystal optical lens, Double Side Polished SSP Surface 8" Sapphire Carrier
Why choose Single Crystal Sapphire products?
Single crystal sapphire possesses excellent optical, physical and chemical properties. It is the hardest oxide crystals, and remains high strength and chemical resistance at high temperatures. It also features a wide transmission wavelength range, great electrical insulation, and good thermal conductivity at low
temperatures.
Product description
The 8-inch sapphire wafers can enable chip makers to roll out more productivity, which will help them drive down costs dramatically.
CRYSCORE is qualified to supply 8-inch epi-ready sapphire wafers. The common thickness is 1300 μm and 1500 μm.
Generally, this series of polished sapphire wafer has a notch instead of a major flat, but flat with custom length is also available. Our sapphire wafers are cleaned in class 100 cleanroom by ultrapure water with quality above 18MΩ *cm, and then packed in clean cassettes.
Electrical Properties of Sapphire
Resistivity, Ohm x cm at 200-500 °C: 1011- 1016
Dielectric constant: 10.0
Dielectric strength, V/cm: 4 x 105
Loss tangent: 1 x 10-4
Specifications of Sapphire Wafer, 6 inch, C-plane (0001), Prime Grade
| Material | High Purity, >99.99%, single crystal Al2O3 |
| Dimension | 200.0 mm +/- 0.05 mm |
| Orientation | C plane (0001) off M (1-100) plane 0.2 +/- 0.05 degree |
| Primary flat orientation | A-plane +/- 1 degree |
| Total Thickness Variation (TTV) | <20um |
| Bow | <25um |
| Warp | <25um |
| Thermal Expansion Coefficient | 6.66 x 10-6 / °C parallel to C axis, 5 x 10-6 /°C |
| Dielectric Strength | 4.8 x 105 V/cm |
| Dielectric Constant | 11.5 (1 MHz) along C axis, 9.3 (1 MHz) perpendicular to C axis |
| Dielectric Loss Tangent (a.k.a. dissipation factor) | less than 1 x 10-4 |
|
Transmittance: |
88% +/-1 % @460 nm |
Application
- Growth substrate for III-V and II-VI compounds
- Electronics and optoelectronics
- IR applications
- Silicon On Sapphire Integrated Circuit(SOS)
- Radio Frequency Integrated Circuit(RFIC)
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FAQ:
Q: What's your MOQ?
A: (1) For inventory, the MOQ is 10pcs.
(2) For customized products, the MOQ is 25pcs up.
Q: What's the way of shipping and cost?
A:(1) We accept DHL, Fedex, EMS etc.
(2) If you have your own express account, it's great.If not,we could help you ship them.
Freight is in accordance with the actual settlement.
Q: What's the delivery time?
For inventory: the delivery is 5 workdays after you place the order.
For customized products: the delivery is 2 or 3 weeks after you place the order.
Q: Do you have standard products?
A: Our standard products in stock.as like 4inch 0.65mm,0.5mm polished wafer.
Q: How to pay?
A:50％deposit, left before delivery T/T,
Q: Can I customize the products based on my need?
A: Yes, we can customize the material, specifications and optical coating for your optical
components based on your needs.
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.