4Inch Silicon Carbide Sic wafer 4H-P Type Diameter 100mm Thickness 350 μm Prime Grade Research Grade

4Inch Silicon Carbide Sic wafer 4H-P Type Diameter 100mm Thickness 350 μm Prime Grade Research Grade

 

4H-P silicon carbide (SiC) is an important semiconductor material commonly used in high-temperature, high-frequency, and high-power electronic devices. 4H-SiC is a type of its crystal structure that has a hexagonal lattice structure. The wide bandgap (approx. 3.26 eV) allows it to operate in high temperature and high voltage environments. High thermal conductivity (about 4.9 W/m ·· K), superior to silicon, can effectively guide and dissipate heat. High thermal conductivity (about 4.9 W/m ·· K), superior to silicon, can effectively guide and dissipate heat. P-type doped silicon carbide has a low resistivity and is suitable for the construction of PN junctions. With the development of electric vehicles and renewable energy technologies, the demand for 4H-P type silicon carbide is expected to continue to grow, driving related research and technological advancements.

 

· Type: 4H-SiC crystal has a hexagonal lattice structure and provides excellent electrical characteristics.

· Wide bandgap: approx. 3.26 eV for high temperature and high frequency applications.

· P-type doping: P-type conductivity is obtained by doping elements such as aluminum, increasing the pore conductor concentration.

· Resistivity: Low resistivity, suitable for high power devices.

· High thermal conductivity: approx. 4.9 W/m·K, effective heat dissipation, suitable for high power density applications.

· High temperature resistance: It can work stably in high temperature environment.

· High hardness: Very high mechanical strength and toughness for harsh conditions.

· High breakdown voltage: Able to withstand higher voltages and reduce device size.

· Low switching loss: Good switching characteristics in high-frequency operation to improve efficiency.
· Corrosion resistance: Good corrosion resistance to a wide range of chemicals.

· Wide range of applications: suitable for electric vehicles, inverters, high-power amplifiers and other fields.

 

 

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