2/4/6/8 Inch Sic Silicon Carbide Crystal Seed Substrate 4H-N Type High Hardness P Grade R Grade D Grade
Product Description:
2/4/6/8 inch Sic Silicon Carbide Crystal Seed Substrate 4H-N Type High Hardness P Grade R Grade D Grade
Silicon carbide (SiC), commonly referred to as silicon carbide, is a compound formed by combining silicon and carbon. Silicon carbide seed crystal is an important form, which is widely used in semiconductor materials, ceramics, abrasives and other fields. Silicon carbide is second only to diamond in hardness, making it an excellent abrasive and cutting tool. Good thermal conductivity makes it suitable for high-temperature applications such as LEDs and power electronics. Good resistance to chemicals, especially acids and alkalis. Good resistance to chemicals, especially acids and alkalis. Good resistance to chemicals, especially acids and alkalis. Due to its superior properties, silicon carbide seed crystals have become an indispensable material in modern industry and technology.
Features:
- High hardness: Silicon carbide is second only to diamond in hardness, making it an excellent abrasive and cutting tool.
- High thermal conductivity: Good thermal conductivity makes it suitable for high-temperature applications such as LEDs and power electronics.
- Corrosion resistance: Good resistance to chemicals, especially acids and alkalis.
- High temperature stability: It can still maintain good physical and chemical properties in high temperature environment.
- Low coefficient of thermal expansion: makes it less susceptible to deformation when temperature changes, making it suitable for precision applications.
Technical Parameter
Applications:
1. Electronics: Widely used in the manufacture of high-power and high-frequency semiconductor devices, such as MOSFETs and diodes. 2. Abrasives and cutting tools: Used to make sandpaper, grinding stones, and cutting tools. 3. Ceramic materials: used to produce wear-resistant, high-temperature resistant ceramic parts. 4. Optoelectronic devices: Excellent performance in optoelectronic applications such as LEDs and lasers. 5. Thermal management materials: used in heat sinks and thermal interface materials to improve the heat dissipation performance of electronic devices.
Customization:
Our SiC crystal seed substrate is RoHS certified. The minimum order quantity is 10pc and the price is by case. The packaging details are customized plastic boxes. The delivery time is within 30 days and we accept T/T payment terms. Our supply ability is 1000pc/month. The SiC substrate size is 2/4/6/8 inch. Place of origin is China.
FAQ:
1. Q: How to prepare silicon carbide seed crystal 4H type?
A: The preparation of silicon carbide seed crystal 4H type usually involves a complex process, including the selection of appropriate raw materials, fine purification, control of growth conditions, etc. Common preparation methods include physical vapor transfer method (PVT). In the preparation process, it is necessary to ensure that the purity, crystal quality and crystal orientation of the seed crystal meet specific requirements.
2. Q: What is the difference between silicon carbide seed type 4H and 6H?
A: There are differences in the crystal structure between the 4H and 6H types of SIC seed crystals, which leads to differences in their physical and chemical properties. Type 4H SIC seed crystals usually have higher electron mobility and wider bandgap width, which makes it more widely used in high performance power devices. The 6H type SIC seed may show unique advantages in some specific applications, such as the optical field.
Tag: #Sic Crystal Seed Substrate, #4H-N Type, #Silicon Carbide wafer.
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