Sapphire Wafer 6" Dia 150mm±0.1mm Thickness 1000um C-plane 99.99%pure

Our 6-inch diameter sapphire wafers are precision-engineered single crystal Al₂O₃ substrates designed for demanding semiconductor applications. With strict diameter control at 150.0±0.1mm and standard thickness of 1000±15μm, these C-plane (0001) oriented wafers deliver exceptional performance for:

• GaN-based LED and power device production
• High-frequency RF components
• Advanced optical systems

Specifications

Applications of Sapphire Wafers

Sapphire Wafers in Optoelectronics

• Micro-LED displays
• UV sterilization devices
• High-brightness lighting

Sapphire Wafers in Power Electronics

• GaN HEMTs for 5G/6G
• EV power modules
• Radar systems

Sapphire Wafers in Emerging Technologies

• Quantum dot devices
• MEMS resonators
• Photonic sensors

KEY Features of Sapphire Wafer

1. Sapphire Wafers's Superior Thermal Performance

• High thermal conductivity: 35 W/m·K @25°C
• Low CTE: 5.3×10⁻⁶/K (25-500°C)
• Thermal shock resistant: Withstands ΔT >500°C

2. Sapphire Wafers's Optical Excellence

• Broadband transmission: 85%@250nm → 92%@450nm → 90%@4000nm
• Minimal birefringence: <3 nm/cm @633nm
• Laser-grade polish: PV <λ/4 @633nm

3. Sapphire Wafers's Mechanical Robustness

• Extreme hardness: 2000 HV (Mohs 9)
• High flexural strength: 700±50 MPa
• Young's modulus: 400 GPa

4. Sapphire Wafers's Manufacturing Advantages

• Diameter control: 150.0±0.1mm (compatible with 6" tools)
• Thickness options: 430-1000μm available
• Edge profiling: Notched or laser-marked per SEMI standards

Sapphire Wafer manufacture process

1. Orientation: Accurately locate the sapphire crystal rod position on the slicing machine, so as to facilitate precise slicing processing 

2. Slicing: Cut the sapphire crystal rod into thin wafers

3. Grinding: Remove the chip cutting damage layer caused by slicing and improve the flatness of the wafer

4. Chamfering: Trim the wafer edge into a circular arc to improve the mechanical strength of the wafer edge to avoid the defects caused by stress concentration

5. Polishing: Improve the roughness of the wafer to reach the epitaxial wafer's precision

6. Cleaning: Remove the contaminants on the wafer surface (such as dust particles, metals, organic contaminants)

7. Quality inspection: The wafer's quality (flatness, surface dust particles, etc.) shall be inspected with high-precision testing instruments to meet customer requirements