6H-N Type SiC Wafer: 2-Inch Substrate, Thickness 350μm or 650μm
As the transportation, energy, and industrial markets evolve, the demand for reliable, high-performance power electronics continues to grow. To meet the requirements for improved semiconductor performance, device manufacturers are turning to wide-bandgap semiconductor materials, such as our 4H-SiC Prime Grade (4H-type n-type silicon carbide) wafers. These wafers offer exceptional crystal quality and low defect density, making them ideal for demanding applications.
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Optimized Performance & Cost
Larger wafer diameters enable economies of scale in semiconductor manufacturing, reducing total cost of ownership.
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Compatibility
Designed to ensure mechanical compatibility with existing and emerging device fabrication processes.
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Customization
Can be tailored to meet specific performance and cost requirements for device design.
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Quality Assurance
Low defect density wafers available (MPD ≤ 0.1 cm⁻², TSD ≤ 400 cm⁻², BPD ≤ 1,500 cm⁻²).
| Parameter | 4H-SiC (Single Crystal) | 6H-SiC (Single Crystal) |
|---|---|---|
| Lattice Parameters | a=3.076Å, c=10.053Å | a=3.073Å, c=15.117Å |
| Stacking Sequence | ABCB | ACB |
| Mohs Hardness | ≈9.2 | ≈9.2 |
| Density | 3.21 g/cm³ | 3.21 g/cm³ |
| Thermal Expansion Coefficient | 4-5*10⁻⁶/K | 4-5*10⁻⁶/K |
| Refractive Index @750nm | n₀=2.61, nₑ=2.66 | n₀=2.60, nₑ=2.65 |
| Dielectric Constant | c~9.66 | c~9.66 |
| Thermal Conductivity (N-type) | a~4.2 W/cm·K @298K | c~3.7 W/cm·K @298K |
| Thermal Conductivity (Semi-insulating) | a~4.9 W/cm·K @298K | c~3.9 W/cm·K @298K |
| Band-gap | 3.23 eV | 3.02 eV |
| Break-down Electrical Field | 3-5*10⁶ V/cm | 3-5*10⁶ V/cm |
| Saturation Drift Velocity | 2.0*10⁵ m/s | 2.0*10⁵ m/s |
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2-inch Wafers
Available in thicknesses of 0.33mm or 0.43mm.
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6H-N/4H-N SiC Substrates
High-purity single-crystal structures for power electronics.
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150mm Wafers
enable improved economies of scale compared to 100mm device fabrication.
We offer comprehensive customization options, including:
- Material specifications (resistivity, doping type, etc.).
- Wafer size optimization (150mm and larger).
- Surface treatment customization.
- Special coatings (e.g., optical coatings).
| Size | Thickness | Type | Grade |
|---|---|---|---|
| 2-inch | 330μm | 4H-N/4H-Semi/6H-Semi | dummy/research/production |
| 3-inch | 350μm | 4H-N/4H-Semi HPSI | dummy/research/production |
| 4-inch | 350μm | 4H-N/500μm HPSI | dummy/research/production |
| 6-inch | 350μm | 4H-N/500μm 4H-Semi | dummy/research/production |
For detailed technical specifications, please refer to our 150mm Silicon Carbide Wafer Technical PDF.
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Shipping Methods
If you have your own courier account with DHL, FedEx, TNT, UPS, EMS, or SF Express, we can act as your shipping agent.
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Payment Methods
T/T, PayPal, Western Union, MoneyGram, Letter of Credit. Bank fees: ≤ USD1000 for Western Union; T/T over USD1000 requires telegraphic transfer.
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Delivery Time
- Stock products: 5 business days.
- Custom products: 7-25 business days (depending on order volume).
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Customization Capabilities
We can tailor material specifications, size parameters, and optical coatings to meet your specific needs.
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.