4-inch N-Type P-Doped Si (100) with 100 nm Ti + 200 nm Cu Thin Film Cu Film on Ti/Silicon Wafer

Product Overview

This 4-inch (100 mm) N-type, P-doped silicon wafer with <100> crystalline orientation is coated with a 100 nm Titanium (Ti) adhesion layer and a 200 nm Copper (Cu) conductive layer.

The Ti layer serves as a strong adhesion buffer and diffusion barrier, improving Cu film attachment and thermal stability. The Cu layer provides high electrical conductivity, making this wafer suitable for microelectronics, MEMS devices, sensors, and research applications.

The wafer is single-side polished (SSP) and supplied in cleanroom packaging to ensure contamination-free handling for precision applications.

The thin-film structure is optimized to achieve uniform thickness, consistent electrical performance, and reliable adhesion. The wafer is ideal for applications requiring a high-quality Cu/Ti interface on silicon substrates.

Specifications

Applications

• Semiconductor interconnect layers

• MEMS microstructures and electrodes

• Sensor devices and contact pads

• Research and development in thin-film electronics

• High-conductivity test wafers for microfabrication

Key Features

• Ti adhesion layer ensures strong Cu-Si bonding

• 200 nm Cu layer provides low-resistance conductive path

• Ti layer acts as a diffusion barrier to improve thermal stability

• PVD deposition ensures consistent thickness and surface quality

• Cleanroom packaging maintains wafer cleanliness and integrity

Usage and Storage Notes

• Handle in cleanroom or low-dust environment

• For high-temperature processing, optimize conditions to prevent Cu/Si interdiffusion

• Store in a dry, low-stress environment to maintain thin-film integrity

• Avoid direct contact with the coated surface

FAQ

1. What is the uniformity of the Cu/Ti thin films on the wafer?
The Ti adhesion layer and Cu conductive layer are deposited using high-vacuum PVD techniques, ensuring uniform thickness across the 4-inch wafer. The Cu film thickness is 200 nm and Ti layer is 100 nm, with minimal variation suitable for microelectronics and research applications.

2. Can this wafer be used in high-temperature processes?
Yes, but precautions are recommended. The Ti layer acts as a diffusion barrier to prevent Cu from diffusing into the silicon substrate. Optimizing temperature and processing conditions is advised to maintain film integrity and uniformity.

3. How should the wafer be stored and handled?
The wafer should be handled in a cleanroom or low-dust environment to avoid contamination. Store in a dry, low-stress environment. Avoid touching the coated surface directly. Each wafer is supplied in a 100-class plastic bag inside a 1000-class cleanroom package.

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