4-Inch C-Plane SSP Sapphire Wafer for GaN / III-Nitride Epitaxy
Product Description
4-Inch C-Plane SSP Sapphire Wafer for GaN / III-Nitride Epitaxy
Overview
We produce 5N (99.999%) Purity monocrystalline Al₂O₃ for advanced semiconductor, optoelectronic, and optical applications.
These substrates are polished on a single side for excellent surface smoothness (Ra ≤ 0.2 nm). These substrates offer exceptional thermal stability (>1500 °C), high optical transmittance (~86–89% at 550 nm), and tight thickness uniformity (TTV ≤20 µm). They are ideal for LED epitaxial growth, GaN and III-nitride semiconductor devices, and high-temperature or optical applications.
Key Features
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High-purity [5N (99.999%) Purity] single-crystal sapphire (Al₂O₃)
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C-plane orientation (0001) with tight ±0.3° tolerance
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Single side polished (SSP) surface, front Ra < 0.2 nm
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Excellent flatness and low bow (<15 µm)
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High thermal and chemical stability for harsh environments
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Customizable axis, diameter, and thickness available
Specifications
| Parameter | Specification |
|---|---|
| Diameter | 100 mm ± 0.3 mm (4 inch) |
| Orientation | C-plane (0001), ±0.3° |
| Thickness | 650 µm ± 15 µm |
| Bow | <15 µm |
| Front Surface | Single Side Polished (Ra < 0.2 nm) |
| Back side Roughness |
1.0 ± 0.2µm
|
| TTV (Total Thickness Variation) | ≤ 20 µm |
| LTV (Local Thickness Variation) | ≤ 20 µm |
| Warp | ≤ 20 µm |
| Material | >99.999% high-purity Al₂O₃ |
Mechanical & Thermal Properties
- Mohs hardness: 9 (second only to diamond)
- Thermal conductivity: 25 W/m·K
- Melting point: 2045°C
- Low thermal expansion ensures dimensional stability
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Applications
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Substrate for GaN, AlN, and III-V or II-VI epitaxial growth
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Blue, green, white and UV LED production
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Laser diode (LD) substrates
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Infrared (IR) optical components and windows
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High-precision optics and microelectronics
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Watch crystals&smartphone covers
Why Choose C-Plane Sapphire?
Sapphire substrate is ideal for high-performance optical and electronic applications. Sapphire offers exceptional hardness (Mohs 9), high thermal stability up to ~1500 °C, and excellent chemical resistance, a perfect choice for demanding environments such as during the MOCVD and MBE crystalline growth procedures. Its c-plane strucgture is also reasonably compatible with the crystal structure of III-nitrides, facilitating epitaxial alignment and uniform crystal growth.
Packaging & Shipping
25 wafers in one cassette box by vacuum bag or customized method upon request
FAQ
Q: What is the optical transmittance range?
A: Transparent from ~200 nm (UV) to ~5000 nm (mid-IR).
Q: Is the wafer conductive?
A: No — sapphire is an insulator, ideal for preventing leakage currents in electronics.
Q: Can the wafer be customized?
A: Yes, we accept custom diameters, thicknesses, and axis orientation according to client specifications.
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Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.