High-Purity Semi-Insulating SiC Wafer HPSI Silicon Carbide Substrate for Power & RF Devices
Product Description
High-Purity Semi-Insulating (HPSI) SiC wafers are advanced single-crystal silicon carbide substrates designed for power electronics, RF, and high-frequency devices. They offer excellent thermal conductivity, high resistivity, strong chemical stability, and superior mechanical hardness. Ideal as a substrate for GaN HEMTs, SiC MOSFETs, and other high-power, high-frequency applications, HPSI wafers ensure minimal leakage, efficient heat dissipation, and stable device performance in demanding environments.
Key Features
- Electrical Performance: High resistivity reduces leakage and parasitic channels, ideal as a substrate for power devices.
- Thermal Performance: High thermal conductivity (~4.9 W/cm·K) for efficient heat dissipation in high-power, high-frequency devices.
- Chemical Stability: Strong chemical inertness, high temperature and oxidation resistance.
- Mechanical Properties: High hardness, wear resistance, and stable lattice structure.
Main Applications
- Power semiconductor device substrates (e.g., GaN HEMTs, SiC MOSFETs)
- High-frequency communication devices and RF amplifiers
- Microwave and radar devices requiring high resistivity and low parasitic capacitance
- Electronics in extreme environments: high temperature, high voltage, and strong radiation
Customization
We provide versatile geometric tailoring. We can adjust wafer thickness and offer various off-cut orientations—ranging from standard 4° tilts to on-axis cuts—to match your epitaxial growth recipe. We also offer different doping options, adjusting resistivity levels to support both N-type conductivity for EV power modules and Semi-Insulating structures for high-frequency RF applications. By fine-tuning our growth cycles, we focus on providing the electrical consistency required for stable, high-performance devices.
FAQ
This material exhibits extremely high electrical resistivity, effectively minimizing parasitic current leakage in high-frequency and high-voltage applications.
Yes, we support tailored specifications including doping concentration, dimensional parameters, and surface characteristics for Prime and Research Grade products.
Prime Grade wafers feature minimal defect density suitable for active device fabrication, while Dummy Grade provides economical solutions for process testing and equipment calibration.
Each wafer undergoes individual vacuum-sealing using cleanroom-compatible materials to ensure surface integrity during transportation.
Standard specification orders typically ship within 2-4 weeks, while customized requirements generally require 4-6 weeks for fulfillment.
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.