Nonlinear Optical NLO Materials LGS Pockels Cell EO Q Switch
Nonlinear optical (NLO) materials LGS Series Electro-optic (EO) Q-switch Pockels Cell
A new kind of EO Q-switch is designed by use of a La3Ga5SiQ14 (LGS) crystal. LGS crystal is one kind of optically active NLO material with a very high damage threshold (about 9 times as that of LN), excellent E-O coefficient, high-temperature stability (better than quartz), the Q-switch is based on the consideration that the total rotation angle of the polarization plane is zero, whereas the polarized wave propagates through the Pockels cell back and forth, with the polarization plane gyration and electro-optic effect existing simultaneously, therefore it is widely used in E-O components such as E-O modulator, Q-switch, etc.
The LGS (LG-EO-Q) series Q-switch (Pockels Cell) is a practical electro-optic device that can be used in medium output energy lasers to partially take the place of DKDP and LiNbO3 series Q-switches.
Features:
- LGS -based Q-switch (Pockels cell);
- For wavelengths up to 3.2μm;
- Transmitted Wavefront Distortion: < l/4;
- Damage threshold: >900MW/cm2 (@1064nm, 10ns, typical, not guaranteed);
- LGS available for medium power systems, partially take place of DKDP and LiNbO3 series Q-switches.
Main Properties:
| Chemical Formula | La3Ga5SiQ14 | |
| Crystal Structure | Trigonal; a＝b＝7.453Å,c＝6.293Å | |
| Density | 5.75 g/cm3 | |
| Melting Point | 1470 °C | |
| Transparency Range | 242 - 3200 nm | |
| Refractive Index | 1.89 | |
| Electro-Optic Coefficients | γ41＝1.8 pm/V, γ11＝2.3 pm/V | |
| Resistivity | 1.7×1010 Ω·cm | |
| Deliquescence | No | |
| Thermal Expansion Coefficients | α11=5.15×10-6 /K (⊥Z-axis) ; α33=3.65×10-6 /K (∥Z-axis) | |
Product details :
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