High Temperature Superconducting Single Crystal LaAlO3 LAO Substrate
LAO Substrates LaAlO3 Single Crystal Substrates Material
1.Introduction :
LaAIO3 is a high temperature superconducting single crystal substrate. It is an excellent substrate for epitaxial growth of high Tc superconductors, magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications.
2.Main Advantages :
- Small dielectric constant;
- wide energy gap;
- large specific surface area;
- certain activity;
- good thermal stability
- low dielectric loss;
- good lattice matching;
- small thermal expansion coefficient;
- good chemical stability;
3.Material Properties :
| Crystal Structure | Cubic |
| Growth Method |
Czochralski method |
| Density |
6.52(g/cm3) |
| Melt Point | 2080℃ |
| Hardness | 6.5 Mohs |
|
Thermal expansion |
9.2 × 10^-6 |
|
Dielectric constants |
24 |
|
Secant loss(10ghz) |
~ 3 × 10 -4 @ 300k, ~ 0.6 × 10 -4 @ 77k |
|
Color and appearance |
Transparent to brown based on annealing condition |
4.Crystro offers :
| Size | Max Φ 76.2mm (3''inches) |
| Thickness | 0.5mm /1.0 mm |
| Polishing | Single or Double |
| Crystal Orientation |
＜100＞ ＜110＞ ＜111＞ |
|
Redirection precision |
±0.5° |
|
Redirection the edge |
2°(special in 1°) |
|
Angle of crystalline |
Special size and orientation are available upon request |
| Ra |
≤5Å(5µm×5µm) |
| Pack |
Class100 clean bag,Class 1000 clean bag |
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