Ferro Electric Thin Films LaAlO3 Lanthanum Aluminate Wafer Substrate
LAO Substrates LaAlO3 High-Temperature Superconducting Substrates Material
Introduction :
LaAIO3 is a high temperature superconducting single crystal substrate. It is an excellent substrate for epitaxial growth of high Tc superconductors, magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications.
Main Features :
- good chemical stability
- Good lattice match most materials with Perovskite structure
- Low dielectric constant
- Low microwave loss
Applications :
- High-Temperature Superconducting, magnetic ,and ferroelectric thin films
- Low loss microwave applications
- Dielectric resonance applications
Material Properties :
| Crystal Structure | Cubic |
| Growth Method |
Czochralski method |
| Density |
6.52(g/cm3) |
| Melt Point | 2080℃ |
| Hardness | 6.5 Mohs |
|
Thermal expansion |
9.2 × 10^-6 |
|
Dielectric constants |
24 |
|
Secant loss(10ghz) |
~ 3 × 10 -4 @ 300k, ~ 0.6 × 10 -4 @ 77k |
|
Color and appearance |
Transparent to brown based on annealing condition |
Crystro offers :
| Size | Max Φ 76.2mm (3''inches) |
| Thickness | 0.5mm /1.0 mm |
| Polishing | Single or Double |
| Crystal Orientation |
＜100＞ ＜110＞ ＜111＞ |
|
Redirection precision |
±0.5° |
|
Redirection the edge |
2°(special in 1°) |
|
Angle of crystalline |
Special size and orientation are available upon request |
| Ra |
≤5Å(5µm×5µm) |
| Pack |
Class100 clean bag,Class 1000 clean bag |
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