High Damage Threshold LGS Pockels Cell Electro Optic EO Q Switch
Price:
Negotiable
MOQ:
1
Delivery Time:
3-4 weeks
Brand:
Crystro
Product Description
High Damage Threshold LGS Crystal Series Electro-Optic EO Q-Switch Pockels Cell
Introduction :
LGS Series Electro-optic (EO) Q-switch Pockels Cell is a new kind of EO Q-switch, which is designed by use of a La3Ga5SiQ14(LGS) crystal. LGS crystal is one kind of optically material with a very high damage threshold (about 9 times as that of LN), excellent E-O coefficient, high-temperature stability The LGS (LG-EO-Q)series Q-switch(Pockels Cell) is a practical electro-optic device that can be used in medium output energy lasers to partially take the place of DKDP, RTPand LiNb03 series Q-switches.
Features :
- For wavelengths up to 3.2μm;
- Transmitted Wavefront Distortion: < l/4;
- Damage threshold: >900MW/cm2 (@1064nm, 10ns);
- LGS available for medium power systems, partially take place of DKDP and LiNbO3 series Q-switches.
Main Properties :
| Chemical Formula | La3Ga5SiQ14 | |
| Crystal Structure | Trigonal; a＝b＝7.453Å,c＝6.293Å | |
| Density | 5.75 g/cm3 | |
| Melting Point | 1470 °C | |
| Transparency Range | 242 - 3200 nm | |
| Refractive Index | 1.89 | |
| Electro-Optic Coefficients | γ41＝1.8 pm/V, γ11＝2.3 pm/V | |
| Resistivity | 1.7×1010 Ω·cm | |
| Deliquescence | No | |
| Thermal Expansion Coefficients | α11=5.15×10-6 /K (⊥Z-axis) ; α33=3.65×10-6 /K (∥Z-axis) | |
Product details :
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Company
ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.
Location
No. 176, Yuner Road Industrial Park, Hefei City, Anhui, China
Contact Person
Zheng