Laser Systems Pockels Cell Electro Optic EO Q Switch
High Damage Threshold Electro-Optic (EO) Q-Switch Pockels Cell For Laser Systems
LGS crystal has a wide range of applications: In addition to the piezoelectric effect and optical rotation effect, its electro-optic effect performance is also very superior. High repetition rate, large cross-sectional clear aperture, narrow pulse width, high power, high and low temperature, etc. LGS crystal electro-optic Q Switches are applicable. We use LGS crystal’s electro-optic coefficient γ11 to make Q-switches and choose a larger aspect ratio to reduce the half-wave voltage of Q-switches. It can be applied to electro-optic Q-switching of all-solid-state lasers with higher power repetition rates.
Features:
- LGS -based Q-switch (Pockels cell);
- For wavelengths up to 3.2μm;
- Transmitted Wavefront Distortion: < l/4;
- Damage threshold: >900MW/cm2 (@1064nm, 10ns, typical, not guaranteed);
- LGS available for medium power systems, partially take place of DKDP and LiNbO3 series Q-switches.
Main Properties:
| Chemical Formula | La3Ga5SiQ14 | |
| Crystal Structure | Trigonal; a＝b＝7.453Å,c＝6.293Å | |
| Density | 5.75 g/cm3 | |
| Melting Point | 1470 °C | |
| Transparency Range | 242 - 3200 nm | |
| Refractive Index | 1.89 | |
| Electro-Optic Coefficients | γ41＝1.8 pm/V, γ11＝2.3 pm/V | |
| Resistivity | 1.7×1010 Ω·cm | |
| Deliquescence | No | |
| Thermal Expansion Coefficients | α11=5.15×10-6 /K (⊥Z-axis) ; α33=3.65×10-6 /K (∥Z-axis) | |
Product details :
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