1450℃ Silicon Carbide Heater Element For Industrial Furnace
Silicon Carbide Heating Elements are used in diverse number of settings, from ceramics and heat treating to metallurgy, assaying and incineration. Starbar elements can be used for application temperatures up to 2,912ºF (1,600ºC), and are available in an array of configurations and styles to meet most standard needs, with customized options available by custom order.
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Our SiC heating elements adopt special technics and can save you energy. Generally speaking, our SiC heating elements have the following characters: low resistance at both end, can general high temperature, with long service life, save you 10% energy compare with others SiC heating elements.
Recommended surface load and Influences to Surfaces of the Elements in Different Operating Temperature
| atmosphere | Furnace Temperature(°C) | Surface Load(W/cm2) | The influence on the Rod |
| Ammonia | 1290 | 3.8 | The action on SiC produces methane and destroys the protection film of SiO2 |
| Carbon dioxide | 1450 | 3.1 | Corrode SiC |
| Carbon monoxide | 1370 | 3.8 | Absorb carbon powder and influence the protection film of SiO2 |
| Halogen | 704 | 3.8 | Corrode SiC and destroy the protection film of SiO2 |
| Hydrogen | 1290 | 3.1 | The action on SiC produces methane and destroys the protection film of SiO2 |
| Nitrogen | 1370 | 3.1 | The action on SiC produces insulating layer of silicon nitride |
| Sodium | 1310 | 3.8 | Corrode SiC |
| silicon dioxide | 1310 | 3.8 | Corrode SiC |
| Oxygen | 1310 | 3.8 | SiC oxidized |
| Water-vapor | 1090-1370 | 3.1-3.6 | The action on SiC produces hydrate of silicon |
| Hydrocarbon | 1370 | 3.1 | Absorb carbon powder resulted in Hot pollution |
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