Pressureless Sintered Silicon Carbide

Reaction sintered silicon carbide, also known as self-bonded silicon carbide, refers to the process of reacting porous steel billets with gas or liquid phases to improve the quality of the billets, reduce pores, and sinter the finished products with a certain strength and dimensional accuracy.

Pressureless sintered silicon carbide (SSiC) is made of high-purity nano-scale ultra-fine silicon carbide raw materials, sintered at a high temperature of 2100-2200 degrees Celsius. It has high-density, high-purity silicon carbide and fine particles, so it has high strength and hardness, excellent corrosion resistance. Among the known engineering ceramics, this material is the best corrosion-resistant material. It has high density (density is 40% of steel), low thermal expansion coefficient, high thermal conductivity, excellent thermal shock resistance, and can be used for a long time in an oxidizing atmosphere at 1650℃. It is resistant to plasma erosion, has high thermal conductivity and low dust, and is widely used in the production of semiconductors and LED equipment.