Reaction Bonded Silicon Carbide

Reaction sintered silicon carbide (SiSiC) is a high-purity micron-sized silicon carbide with carbon, which is sintered by reacting with silicon at 1600℃ under high temperature and high vacuum. It contains 10%-12% free silicon and is a structural ceramic material with good comprehensive performance. It has the characteristics of high temperature resistance, wear resistance, small friction coefficient, and resistance to corrosion by various chemical substances except hydrofluoric acid and strong metals. It can be used to make parts with complex shapes, and the size change before and after crystal sintering is very small.