ED Type Equal Diameter Silicon Carbide Rods Low Resistance Long Lifespan Heating Elements For Industrial Furnaces
Type Equal Diameter Silicon Carbide Rods - Low Resistance, Long Lifespan Heating Elements for Industrial Furnaces
Description:
The SiC electric heating elements are mainly made of high quality green silion carbide, it's a kind of tubular and non-metallic high temperature Electric Heating Element produced by processing of msaking semifinished product, high-temperature silicification, re-crystallization. ED Series Equal Diameter Silicon Carbide Rods are advanced replacements for traditional thick-end silicon carbide rods. Featuring uniform diameter structure, these rods deliver 30% lower end resistance than traditional models, significantly reducing thermal stress and prolonging service life. Ideal for high-temperature applications up to 1450°C, they excel in energy efficiency with 15-20% power savings.
Typical application:
SiC electric heating element is widely used in high temperature furnaces and other electric heating equipment of magnetic materials, powder metallurgy, ceramics, glass, metallurgy, machinery and other industries.
The physical properties of silicon carbide Rodes:
| Specific Gravity | 2.6-2.8 g/cm3 | Bend Strength | >300 kg |
| Hardne | >9 MOH'S | Tensile Strength | >150 kg/cm3 |
| Porosity Rate | <30% | Thermal Radiance | 0.85 |
The linear expansion coefficient, thermal conductivity and specific heat of SiC element change with temperature. And the relative data show as followings:
|
Temperature (℃) |
Linear Expansion Cofficient (10-6m/℃) |
Thermal Conductivity (kcal/Mgr ℃) |
Specific Heat (cal/g ℃) |
| 0 | / | / | 0.148 |
| 300 | 3.8 | / | / |
| 400 | / | / | 0.255 |
| 600 | 4.3 | 14-18 | / |
| 800 | / | / | 0.294 |
| 900 | 4.5 | / | / |
| 1100 | / | 12-16 | / |
| 1200 | 4.8 | / | 0.325 |
| 1300 | / | 10-14 | / |
| 1500 | 5.2 | / | / |
Temperature and Surface Load of SiC Elements Under Different Atomosphere:
| Atomosphere | Furnace Temp(℃) |
Surface Load (W/cm2) |
Impact on the Element | Solution |
| Ammonia | 1290 | 3.8 | Acting on SiC to form thus decrease SiO2 protective film | Active at dew point |
| CO2 | 1450 | 3.1 | Erosion of elements | Protecting by quartz tube |
| tube18%CO | 1500 | 4.0 | No action | |
| 20%CO | 1370 | 3.8 | Adsorbing C grains to act on SiO2 protective film | |
| Halogen | 704 | 3.8 | Attacking SiC and decressing SiO2 protective film | Protecting by quartz tube |
| Hydrocarbon | 1310 | 3.1 | Adsorbing C grains causes hot pollution | Filling with enough air |
| Hydrogen | 1290 | 3.1 | Acting on SiC to form thus decrease SiO2 protective film | Active at dew point |
| Menthane | 1370 | 3.1 | Adsorbing C grains causes hot pollution | |
| N | 1370 | 3.1 | Acting with SiC forms SiN insulating layer | |
| Na | 1310 | 3.8 | Erosion of elements | Protecting by quartz tube |
| SO2 | 1310 | 3.8 | Erosion of elements | Protecting by quartz tube |
| Vacuum Atomosphere | 1204 | 3.8 | ||
| Oxygen | 1310 | 3.8 | SiC is oxided | |
|
Water (Different Contents) |
1090~1370 | 3.1~3.6 | Acting on SiC forms hydtate of Sillicon |
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