HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
                                                                                                           
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19 Years
Since 2007
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Aluminum Nitride Substrate

Price Negotiable
Price: 10USD/PC
MOQ: 1 PC
Delivery Time: 5-8 work days
Brand: ZG
Product Description

Aluminum Nitride Substrate

 

Product Advantages:
1. Standard thermal conductivity 175W/m·K, high thermal conductivity 200W/m·K, ultra-high thermal conductivity 230W/m·K.
2. Customization services available, capable of producing substrates such as milled type, ready-to-burn type, high bending resistance, high thermal conductivity, polished type, and laser-marked type.
3. Suitable for various metallization: DPC, DBC, TPC, AMB, thick film printing, thin film printing, etc.
4. Minimum thickness can reach 0.1mm.

 

Features: It has high mechanical strength, high heat resistance, and low cost.

Dimensions: The standard size of the sintered aluminum nitride substrate is 120mm x 120mm x 1mm, and it can also be customized according to customer requirements.

Applications: High-temperature tools, molten metal containers, solar cells, and other fields.

 

Item Unit NC-170 NC-200 NC-230
Color - Gray/Beige Gray/Beige Gray/Beige
Thermal conductivity [@20°℃]w/m·k  
is greater than or equal to
170
is greater than or equal to
195
is greater than or equal to
225
Bending Strength MPa >450 >380 >350
Surface Roughness μm <0.5 <0.8 <0.85
Volume Density g/cm²
is greater than or equal to
3.3
is greater than or equal to
3.3
is greater than or equal to
3.3
Warpage %0 <2.5 <2.5 <2.5
Coefficient of Linear Expansion [RT-300℃]10-6mm/℃ 4.6 4.6 4.6
Volume Resistance 20℃
Ω
=1V/A·cm·cm
>10^14 >10^13 >10^13
Dielectric constant [@1MHz] 9.0 8.7 8.5
Dielectric Loss [@1MHz]
4.6*10^-4

4.6*10^-4

4.6*10^-4
Dielectric Strength (KV/mm)
is greater than or equal to
15
is greater than or equal to
15
is greater than or equal to
15

 

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Company HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
Location No. 26, Dongqing Street, High-tech Zone, Zhengzhou ,Henan, China
Contact Person Daniel

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