Aluminium Nitride (AlN) Parts
Aluminium Nitride (AlN) Parts
The main component of volumetric parts made on the basis of aluminum nitride (AlN) is a high thermal conductivity, varying in the range from 170 to 230 W/m *K. That is why AlN-based ceramics are used in cases where it is necessary to remove significant amounts of heat generated, for example, in cases where operating currents are units, tens of amperes. Also, AlN has a high purity of structure and chemical uniformity, which directly affects the uniformity of properties. Aluminum nitride is highly inert to the effects of almost all types of acids (with the exception of hot mineral species). Therefore, it becomes possible to make cases of AlN for the circulation of liquids through them.
The products are made of ceramics based on aluminum nitride AlN according to the technical specifications 23.43.10.110-002-34576770-2016- DN
Specifications
|
Properties |
Conditions |
Units of measurement |
AlN-170 |
|
Colour |
|
|
gray |
|
Bulk density |
|
г/см3 |
≥3,30 |
|
Flexural strength |
|
МПа |
≥ 350 |
|
Modulus of elasticity |
|
ГПа |
≥ 320 |
|
Poisson 's Ratio |
|
|
|
|
Vickers Hardness |
HV5 |
ГПа |
1000 |
|
40-400 °C |
10-6 /°C |
4,6 |
|
|
400-800 °C |
10-6 /°C |
5,3 |
|
|
Thermal conductivity |
25-100 |
Вт/м∙K |
≥170 |
|
Volumetric resistance |
25 °C |
Ом∙см |
≥ 1014 |
|
300 °C |
Ом∙см |
≥ 1012 |
|
|
500 °C |
Ом∙см |
≥ 1010 |
|
|
|
|||
|
Thick film |
нет |
||
|
Thin film |
|
|
да |
Application area
-
blank for housings;
-
manufacturing of substrates for semiconductors;
-
as a heat-absorbing element in LED circuits and high-power electronic devices;
-
compensators;
-
base for high-frequency resistors and as enclosures for various circuits;
-
elements for laser diodes, semiconductor crystals.
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