Silicon Nitride (Si3N4) Parts
Silicon Nitride (Si3N4) Parts
Silicon nitride [Si3N4] is a ceramic, the peculiarity of which lies in its increased strength characteristics and increased wear resistance, relative to other types of ceramic materials. Therefore, it is best used in structures where high strength of the product and its resistance to high temperature changes are necessary.
Due to their mechanical characteristics, products made using silicon nitride perfectly withstand conditions of prolonged thermal cycling, shocks, tests with increased friction, as well as interaction with aggressive media.
Specifications
|
Properties |
Conditions |
Units of measurement |
Materials |
|
Si3N4 |
|||
|
Colour |
|
|
серый |
|
Bulk density |
|
г/см3 |
≥ 3,20 |
|
Water absorption |
— |
% |
0 |
|
|
|
|
|
|
Flexural strength |
|
МПа |
900 |
|
Compressive strength |
|
МПа |
2500 |
|
Modulus of elasticity |
|
ГПа |
315 |
|
Knoop hardness |
KNOOP 1000 gm5 |
ГПа |
16 |
|
Fracture toughness |
|
МПа∙м1/2 |
7,5 |
|
|
|
|
|
|
Coefficient of thermal expansion |
25-1000 °C |
10-6 /°C |
3,1 |
|
Thermal conductivity |
— |
Вт/м∙K |
|
|
25 °C |
Вт/м∙K |
19 |
|
|
100 °C |
Вт/м∙K |
|
|
|
|
100 °C |
Дж/кг∙К |
3,1 |
|
Heat shock resistance |
ΔT |
°C |
800 |
|
Maximum operating temperature |
|
°C |
1400 |
|
Dielectric constant |
1 МГц |
— |
— |
|
Dielectric losses |
1 МГц |
∙10-4 |
— |
|
Dielectric strength |
DC |
кВ/мм |
|
|
Volumetric resistance |
25 °C |
Ом∙см |
≥ 1014 |
|
300 °C |
Ом∙см |
|
|
|
500 °C |
Ом∙см |
— |
|
|
|
|||
|
Thick film |
нет |
||
|
Thin film |
|
|
да |
Application area
-
as an insulator;
-
manufacturing of storage devices;
-
production of integrated circuits;
-
a more reliable and durable alternative for aluminum oxide (Al2O3);
-
the basis for the manufacture of high-power electronics boards;
-
substrates for sensors, electronic devices that are operated under the influence of aggressive environments, etc
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