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Beryllium Oxide (BeO) parts

Price Negotiable
Price: 10USD/PC
MOQ: 1 PC
Delivery Time: 5-8 work days
Brand: ZG
Product Description

Beryllium Oxide (BeO) parts

 

Beryllium oxide [BeO] has a unique combination of thermal, electrical, optical and mechanical properties that are used for a wide range of applications: from thermal control systems and integrated electronics to high-temperature refractory components and nuclear reactors. Beryllium oxide has no analogues among oxide-ceramic materials in terms of thermal conductivity.

 

BeO-based ceramics have a thermal conductivity exceeding that of many metals, second only to copper and silver. At the same time, the thermal conductivity of BeO is 10 times higher than that of Al2O3, and 1.5 times higher than that of AlN.

 

The dielectric constant is lower than that of aluminum oxide and nitride. In this connection, BeO is an excellent insulator with a volumetric resistance of the order of 1014 ... 1018 ohms * cm, which depends on the purity of the material.

 

In addition to high heat resistance, BeO has excellent strength with high values of specific stiffness.

 

Ceramics based on beryllium oxide BeO are produced according to TU23.43.10-008-34576770-2017 under the trademarks OBK-97 and OBK-100.

 

 

Specifications

Properties

Conditions

Units of measurement

Material

BeO 99,5%

Colour

 

 

brown

Bulk density

 

г/см3

≥2,85

Water absorption

%

0

 

 

 

 

Flexural strength

 

МПа

≥180

 

 

 

 

Coefficient of thermal expansion

25-1000 °C

10-6 /°C

 

40-400 °C

10-6 /°C

7,0 ~ 8,5

Thermal conductivity

25 °C

Вт/м∙K

≥230

Heat shock resistance

ΔT

°C

800

Dielectric constant

1 МГц

6,5 ~ 7,3

Dielectric losses

1 МГц

∙10-4

≤ 4

Dielectric strength

 

 

18

Volumetric resistance

25 °C

Ом∙см

≥ 1014

       

Thick film

   

нет

Thin film

 

 

да

Application area

 

 

 

  • as boards for radio engineering devices working with microwave radiation. The basis for the manufacture of "traveling wave lamps";

  • substrates for solid-state emitters;

  • creation of integrated circuits for X-ray devices;

  • as a housing for heating elements;

  • substrate for ionizing radiation sensors.

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Company HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
Location No. 26, Dongqing Street, High-tech Zone, Zhengzhou ,Henan, China
Contact Person Daniel

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