Hangzhou Freqcontrol Electronic Technology Ltd.
                                                                                                           
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Double Side Polished High-Performance Sapphire Al2O3 Crystal Substrate Ultrathin 2" 3" 4"

Price Negotiable
Price: Negotiable
MOQ: 5 Pieces
Delivery Time: 1-4 weeks
Brand: CSIMC
Product Description

Double Side Polished High-Performance Sapphire Al2O3 Crystal Substrate Ultrathin 2" 3" 4"

 

Sapphire wafers are the epitome of modern semiconductor technology, renowned for their exceptional hardness, chemical stability, and optical transparency. These wafers are precision-crafted from high-quality sapphire crystal, making them the ideal choice for a wide range of demanding applications.

With their superior mechanical strength, sapphire wafers offer unmatched durability, able to withstand extreme conditions without compromising performance. This makes them ideal for use in high-power electronics, solar cells, and optoelectronic devices where durability and stability are paramount.

Moreover, sapphire wafers exhibit excellent thermal conductivity, effectively dissipating heat to maintain consistent performance even under heavy loads. This ensures longer-lasting devices and reduced risk of thermal damage.

In summary, sapphire wafers offer the perfect blend of durability, stability, and optical transparency, making them the preferred choice for next-generation electronics. Upgrade your devices with sapphire wafers and enjoy superior performance and reliability.

OPTICAL PROPERTIES

Transmission Range 0.17 to 5.5 microns
Refractive Index 1.75449 (o) 1.74663 (e) at 1.06 microns
Reflection Loss at 1.06 microns (2 surfaces) for o-ray - 11.7%; for e-ray - 14.2%
Index of Absorption 0.3 x 10-3 cm-1 at 2.4 microns
dN/dT 13.7 x 10-6 at 5.4 microns
dn/dm = 0 1.5 microns

 

PHYSICAL PROPERTIES

Density 3.97 g/cm3
Melting Point 2040 degrees C
Thermal Conductivity 27.21 W/(m x K) at 300 K
Thermal Expansion 5.6 x 10 -6 /K (parallel C-axis) & 5.0 (perpendicular C-axis) x 10 -6 /K
Hardness Knoop 2000 kg/mm 2 with 2000g indenter
Specific Heat Capacity 419 J/(kg x K)
Dielectric Constant 11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz
Young's Modulus (E) 335 GPa
Shear Modulus (G) 148.1 GPa
Bulk Modulus (K) 240 GPa
Elastic Coefficients C11=496 C12=164 C13=115
C33=498 C44=148
Apparent Elastic Limit 275 MPa (40,000 psi)
Poisson Ratio 0.25

 

 

 

 

Acceptance Check

 

1. The product is fragile. We have adequately packed it and labeled it fragile. We deliver through excellent domestic and international express companies to ensure transportation quality.

 

2. After receiving the goods, please handle with care and check whether the outer carton is in good condition. Carefully open the outer carton and check whether the packing boxes are in alignment. Take a picture before you take them out.

 

3. Please open the vacuum package in a clean room when the products are to be applied.

 

4. If the products are found damaged during courier, please take a picture or record a video immediately. DO NOT take the damaged products out of the packaging box! Contact us immediately and we will solve the problem well.

Get in Touch

Have questions about our products or want to discuss a custom order? Our team is ready to help you.

Company Hangzhou Freqcontrol Electronic Technology Ltd.
Location Room 1106, CIBC, No.198 Wuxing Rd, Hangzhou, P.R.China
Contact Person Xu

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