4-Inch LiNbO3 Wafer with 0.25mol% Er or 5mol% MgO Doping for Optical Applications
High-quality 4-inch diameter LiNbO3 wafers available with 0.25mol% Erbium doping or 5mol% Magnesium Oxide doping, engineered for advanced optical applications requiring precision and reliability.
LiNbO3 (LN) crystal offers exceptional physical, chemical, and mechanical stability with high temperature resistance, corrosion resistance, and excellent processability. With a high Curie temperature (1142°C±3°C) and no phase transitions from room temperature to Curie point, these crystals maintain polarization stability and can be reused repeatedly.
Doping LiNbO3 with various ions creates specialized properties suitable for optical waveguide amplifiers, frequency doubling converters, optical storage media, and other advanced applications.
BonTek provides customized doped LN wafers including Er:LN, MgO:LN, and Fe:LN with precise doping concentrations. We also offer black reduced LN wafers in 3-inch, 4-inch, and 6-inch diameters for all cut angles, with 128°Y and Z-cut options available up to 8-inch diameter.
| Parameter | Specifications |
|---|---|
| Material | 3", 4", 6", 8" LN Wafer |
| Orientation | X / Z / Y41° / Y64° / Y128° / YZ / YX or Customized |
| Curie Temperature | 1142°C±3°C |
| Doping Options | Er:LN, MgO:LN, Fe:LN, Er:MgO:LN |
| Surface Finish | Single or Double Side Polish (DLP/SLP/SSP/DSP) |
| Thickness | 0.18/0.25/0.35/0.50/1.00+ mm |
| TTV | < 1~5µm |
| BOW | ± (25µm ~40µm) |
| Warp | <= 35µm |
| LTV (5mm×5mm) | < 1.5 µm |
| PLTV (<0.5µm) | ≥98% (5mm×5mm) with 2mm edge excluded |
| Edge | SEMI M1.2 compliant with GC800#, typically C-type |
| Orientation Flats | Available upon request |
| Polished Side Ra | Roughness Ra ≤ 5Å |
| Back Side Criteria | Roughness Ra: 0.5-1.0µm GC#1000 |
| Edge Rounding | SEMI M1.2 Standard / IEC62276 compliant |
| Cracks, Saw Marks, Stains | None |
| Property | Value |
|---|---|
| Transmission Range | 0.32 - 5.2 µm (thickness 6mm) |
| Refractive Index | no = 2.237, ne = 2.158 @633 nm |
| Reflection Loss | 14.6% @0.633µm |
| Density | 4.64 g/cm³ |
| Melting Point | 1253°C |
| Molecular Weight | 147.8456 |
| Thermal Conductivity | ∥ C: 4.6 W/(m·K), ⊥ C: 4.19 W/(m·K) (300/304K) |
| Specific Heat Capacity | 628 J/(kg·K) |
| Thermal Expansion | ∥ C: 14.8 × 10⁻⁶ /K, ⊥ C: 4.1 × 10⁻⁶ /K @298K |
| Hardness (Mohs) | 630 |
| Young's Modulus | 170 GPa |
| Shear Modulus | 68 GPa |
| Bulk Modulus | 112 GPa |
| Elastic Coefficient | C11 = 202; C12 = 55; C13 = 71; C14 = 3.8; C33 = 242; C44 = 60.1; C66 = 8.3 GPa |
| Dielectric Constant | 82 @298K |
| Solubility in Water | Insoluble |
| Crystal Structure | Single crystal, synthetic |
| Crystal Type | Hexagonal, a = 5.15 Å, c = 13.86 Å |
| Cleavage Planes | No cleavage |
| Poisson Ratio | 0.25 |
| Applications | Electro-optic Q-switch, surface acoustic wave substrate, integrated optical substrate, optical parametric oscillator |
- Products are carefully packaged and labeled as fragile, shipped through reputable domestic and international courier services
- Upon receipt, handle with care and inspect outer carton condition
- Photograph packaging before removing products from carton
- Open vacuum packaging in clean room environment prior to application
- If damage is detected during courier transit, photograph or video record immediately without removing damaged products from packaging. Contact us promptly for resolution.
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