Hangzhou Freqcontrol Electronic Technology Ltd.
                                                                                                           
Verified Supplier
27 Years
Since 1999
Menu

Stepanov Method Sapphire Wafer 2-6 Inch R-Axis M-Plane with 0.25-1mm Thickness for Industrial Applications

Price Negotiable
Price: Negotiable
MOQ: 5 Pieces
Delivery Time: 1-4 weeks
Brand: BonTek
Product Description
Manufacturing Process
Stepanov's Method enables the growth of monocrystalline sapphire components in various configurations including rods, pipes, and tapes. The Horizontal Directed Crystallization (HDC) technique combines elements of directed crystallization and zonal melting for superior crystal synthesis.
This advanced method involves slow movement of a local melted zone along a boat-shaped container with furnace charge. HDC provides exceptional cross-section consistency and allows for growing sapphire monocrystals of any crystallographic orientation in plate forms with record sizes unattainable through other growth methods.
Stepanov Method sapphire wafer manufacturing process Sapphire wafer crystal structure and orientation Industrial sapphire wafer production facility
Optical Properties
PropertySpecification
Transmission0.17 to 5.5 μm
Refractive Index1.75449 (o) 1.74663 (e) at 1.06 μm
Reflection Loss11.7% for o-ray, 14.2% for e-ray at 1.06 microns (2 surfaces)
Absorption Index0.3 × 10⁻³ cm⁻¹ at 2.4 μm
dN/dT13.7 × 10⁻⁶ at 5.4 μm
dn/dm = 01.5 μm
Technical Specifications
ParameterSpecification
OrientationR-plane, C-plane, A-plane, M-plane or specified orientation
Orientation Tolerance±0.3°
Diameter2", 3", 4", 6", 8" or custom sizes
Diameter Tolerance0.1mm (2"), 0.2mm (3"), 0.3mm (4"), 0.5mm (6")
Thickness0.25mm, 0.33mm, 0.43mm, 0.65mm, 1mm or custom
Thickness Tolerance25μm
Primary Flat Length16.0±1.0mm (2"), 22.0±1.0mm (3"), 30.0±1.5mm (4"), 47.5/50.0±2.0mm (6")
Primary Flat OrientationA-plane (1 1-2 0) ±0.2°; C-plane (0 0-0 1) ±0.2°, Projected C-Axis 45±2°
TTV≤10μm (2"), ≤15μm (3"), ≤20μm (4"), ≤25μm (6")
BOW≤10μm (2"), ≤15μm (3"), ≤20μm (4"), ≤25μm (6")
Front SurfaceEpi-Polished (Ra
Back SurfaceFine ground (Ra=0.6μm~1.4μm) or Epi-polished
PackagingClass 100 clean room environment
Sapphire wafer quality inspection and testing Sapphire wafer acceptance check procedures
Handling & Quality Assurance
  • Products are carefully packed with fragile labeling and shipped via premium domestic and international carriers
  • Upon receipt, inspect outer carton condition and photograph packaging before removal
  • Open vacuum packaging only in clean room environments during application
  • If damage is detected during transit, photograph/video document immediately without removing from packaging and contact us for resolution

Get in Touch

Have questions about our products or want to discuss a custom order? Our team is ready to help you.

Company Hangzhou Freqcontrol Electronic Technology Ltd.
Location Room 1106, CIBC, No.198 Wuxing Rd, Hangzhou, P.R.China
Contact Person Xu

Request A Quote

Please check your email address.
Your message must be at least 20 characters.