Hangzhou Freqcontrol Electronic Technology Ltd.
                                                                                                           
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R-plane 1102 C-plane 0001 Sapphire Wafer for IR and UV Applications - 2 to 8 Inch Diameter, 0.25 to 1mm Thickness

Price Negotiable
Price: Negotiable
MOQ: 5 Pieces
Delivery Time: 1-4 weeks
Brand: BonTek
Product Description
Product Overview
R-plane (1102) and C-plane (0001) sapphire wafers engineered for infrared (IR) and ultraviolet (UV) wavelength applications. These high-purity single crystal sapphire substrates offer exceptional optical and mechanical properties for demanding semiconductor and optoelectronic applications.
Crystal Growth Method
Our sapphire wafers are manufactured using the Kyropoulos method (Kr), an advanced crystal growth technique derived from the Czochralski process. This method enables production of large single crystal sapphire ingots with superior quality and consistency.
Available Crystal Orientations
R-plane (1102)
C-plane (0001)
A-plane (1120)
M-plane (1010)
N-plane (1123)
Custom orientations available
Crystal orientation significantly impacts physical properties and lattice matching with other materials for optimal device integration.
R-plane sapphire wafer for IR and UV applications C-plane sapphire wafer crystal structure Sapphire wafer manufacturing process
Optical Properties (Al2O3)
Property Specification
Transmission Range 0.17 to 5.5 microns
Refractive Index 1.75449 (o) 1.74663 (e) at 1.06 microns
Reflection Loss 11.7% (o-ray) and 14.2% (e-ray) at 1.06 microns
Index of Absorption 0.3 x 10-3 cm-1 at 2.4 microns
dN/dT 13.7 x 10-6 at 5.4 microns
dn/dm = 0 1.5 microns
Physical Properties (Al2O3)
Property Specification
Density 3.97 g/cm3
Melting Point 2040°C
Thermal Conductivity 27.21 W/(m x K) at 300 K
Thermal Expansion 5.6 x 10-6/K (parallel C-axis) & 5.0 x 10-6/K (perpendicular C-axis)
Hardness Knoop 2000 kg/mm2 with 2000g indenter
Specific Heat Capacity 419 J/(kg x K)
Dielectric Constant 11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz
Young's Modulus (E) 335 GPa
Shear Modulus (G) 148.1 GPa
Bulk Modulus (K) 240 GPa
Elastic Coefficients C11=496 C12=164 C13=115 C33=498 C44=148
Apparent Elastic Limit 275 MPa (40,000 psi)
Poisson Ratio 0.25
Technical Specifications
Parameter Specification
Orientation Tolerance ± 0.3°
Available Diameters 2", 3", 4", 6", 8" or custom sizes
Diameter Tolerance 0.1mm (2"), 0.2mm (3"), 0.3mm (4"), 0.5mm (6")
Available Thickness 0.25mm, 0.33mm, 0.43mm, 0.65mm, 1mm or custom
Thickness Tolerance 25μm
Primary Flat Length 16.0±1.0mm (2"), 22.0±1.0mm (3"), 30.0±1.5mm (4"), 47.5/50.0±2.0mm (6")
Primary Flat Orientation A-plane (1 1-2 0) ± 0.2°; C-plane (0 0-0 1) ± 0.2°, Projected C-Axis 45 ± 2°
TTV ≤10μm (2"), ≤15μm (3"), ≤20μm (4"), ≤25μm (6")
BOW ≤10μm (2"), ≤15μm (3"), ≤20μm (4"), ≤25μm (6")
Front Surface Epi-Polished (Ra
Back Surface Fine ground (Ra=0.6μm~1.4μm) or Epi-polished
Packaging Class 100 clean room environment
Sapphire wafer quality inspection process Sapphire wafer acceptance check procedure
Handling & Inspection Guidelines
Important Handling Instructions
Products are fragile and packed with fragile labeling
Delivered via premium domestic and international express services
Inspect outer carton condition upon receipt
Document packaging condition with photos before removal
Open vacuum packaging in clean room environment only
If damage is found, photograph/video immediately and contact us
Do not remove damaged products from packaging

Get in Touch

Have questions about our products or want to discuss a custom order? Our team is ready to help you.

Company Hangzhou Freqcontrol Electronic Technology Ltd.
Location Room 1106, CIBC, No.198 Wuxing Rd, Hangzhou, P.R.China
Contact Person Xu

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