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S1337-66BQ Infrared Silicon Photodetector with 960 nm Peak Wavelength and 0.5 A/W Sensitivity for UV to IR Applications

Price Negotiable
Price: Negotiable
MOQ: 1
Delivery Time: 3-5work days
Brand: Hamamatsu
Product Description
Product Overview

The S1337-66BQ Infrared Silicon Photodetector delivers precise photometric determination across the ultraviolet to infrared spectrum, making it ideal for demanding optical measurement applications.

Key Features
  • Broad spectral range from ultraviolet to infrared band
  • Exceptional UV sensitivity with 75% quantum efficiency at 200 nm
  • Low capacitance design for enhanced performance
  • Fast response time with 1 μs rise time
  • Minimal dark current for accurate measurements
Technical Specifications
Parameter Value
Peak Sensitivity Wavelength 960 nm
Sensitivity 0.5 A/W
Dark Current (Maximum) 100 pA
Rise Time 1 μs
Junction Capacitance 380 pF
Operating Temperature 25°C (Typical)
Performance Highlights

This photodetector operates under standard measurement conditions: Ta=25°C (Typical), Photosensitivity at λ=960 nm, Dark current at VR=10 mV, Rise time at VR=0 V, and Terminal capacitance at VR=0 V, f=10 kHz.

Product Images
S1337-66BQ Infrared Silicon Photodetector technical diagram and specifications S1337-66BQ photodetector component view showing construction details S1337-66BQ infrared silicon photodetector packaging and labeling

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Company ShenzhenYijiajie Electronic Co., Ltd.
Location Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028
Contact Person Xu

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