S1337-66BQ Infrared Silicon Photodetector with 960 nm Peak Wavelength and 0.5 A/W Sensitivity for UV to IR Applications
Price:
Negotiable
MOQ:
1
Delivery Time:
3-5work days
Brand:
Hamamatsu
Product Description
Product Overview
The S1337-66BQ Infrared Silicon Photodetector delivers precise photometric determination across the ultraviolet to infrared spectrum, making it ideal for demanding optical measurement applications.
Key Features
- Broad spectral range from ultraviolet to infrared band
- Exceptional UV sensitivity with 75% quantum efficiency at 200 nm
- Low capacitance design for enhanced performance
- Fast response time with 1 μs rise time
- Minimal dark current for accurate measurements
Technical Specifications
| Parameter | Value |
|---|---|
| Peak Sensitivity Wavelength | 960 nm |
| Sensitivity | 0.5 A/W |
| Dark Current (Maximum) | 100 pA |
| Rise Time | 1 μs |
| Junction Capacitance | 380 pF |
| Operating Temperature | 25°C (Typical) |
Performance Highlights
This photodetector operates under standard measurement conditions: Ta=25°C (Typical), Photosensitivity at λ=960 nm, Dark current at VR=10 mV, Rise time at VR=0 V, and Terminal capacitance at VR=0 V, f=10 kHz.
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Company
ShenzhenYijiajie Electronic Co., Ltd.
Location
Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028
Contact Person
Xu