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GT-UVB-M UV Photodiode Sensor with 290nm Peak Wavelength and 0.129 A/W Responsivity for UVB+UVC Detection

Price Negotiable
Price: Negotiable
MOQ: 1
Delivery Time: 3-5work days
Brand: Uv
Product Description
Product Overview

The GT-UVB-M UV Photodiode is a high-performance UV detection sensor featuring Gallium Nitride (GaN) technology, designed for precise UVB and UVC band monitoring with excellent visible blindness characteristics.

Key Features
  • Selective response to UVB+UVC band (230-325 nm)
  • Photovoltaic mode operation for efficient detection
  • TO-46 metal housing for durability and thermal stability
  • Excellent visible blindness with UV-visible rejection ratio >10
  • High responsivity of 0.129 A/W at 290 nm peak wavelength
  • Low dark current <1 nA for accurate measurements
Technical Specifications
Parameter Symbol Value Unit
Wavelength of peak responsivity λp 290 nm
Peak responsivity (at 385 nm) Rmax 0.129 A/W
Spectral response range (R=0.1×Rmax) - 230-325 nm
UV-visible rejection ratio (Rmax/R450 nm) - >10 -
Dark current (Vr = -5 V) Id <1 nA
Capacitance (at 0 V and 1 MHz) Cp 18 pF
Operation temperature range Topt -25 to 85 °C
Operating Conditions
Maximum Ratings:
• Storage temperature: -40 to 80°C
• Soldering temperature (3s): 260°C
• Reverse voltage: -10 V
• Temperature coefficient (@265 nm): 0.05 %/°C
Applications
  • UVB lamp monitoring and control systems
  • UVB radiation dose measurement equipment
  • Industrial UV detection and safety monitoring
  • Scientific research and laboratory instrumentation
Product Image
GT-UVB-M UV Photodiode UV Detection Sensor with TO-46 metal housing

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Company ShenzhenYijiajie Electronic Co., Ltd.
Location Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028
Contact Person Xu

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