G8370-81 InGaAs PIN Photodiode with 1mm Photosensitive Area and 35MHz Cutoff Frequency for Low PDL Applications
The G8370-81 InGaAs PIN Photodiode is engineered for precision optical detection applications requiring minimal polarization-dependent loss and superior noise performance at 1.55μm wavelength.
- Low polarization-dependent loss (PDL) for consistent performance
- Low noise operation with minimal dark current
- Large photosensitive area: φ1 mm diameter
- High sensitivity at 1.55μm wavelength
- Large shutter resistance for stable operation
| Parameter | Value |
|---|---|
| Peak Sensitivity Wavelength | 1.55 μm (typical) |
| Sensitivity | 1.1 A/W (typical) |
| Dark Current | 5 nA (maximum) |
| Cutoff Frequency | 35 MHz (typical) |
| Junction Capacitance | 90 pF (typical) |
| Noise Equivalent Power | 2×10⁻¹⁴ W/√Hz (typical) |
| Photosensitive Area | φ1 mm diameter |
Exceptional low noise equivalent power of 2×10⁻¹⁴ W/√Hz ensures high signal-to-noise ratio in demanding optical detection applications. The 35 MHz cutoff frequency and 90 pF junction capacitance provide excellent high-frequency performance characteristics.
Measurement conditions: Typical operation at TA = 25°C, photosensitivity measured at λ=λp, dark current measured at VR=1V, cutoff frequency measured at VR=1V with RL=50Ω at -3dB, terminal capacitance measured at VR=1V and F=1MHz, unless otherwise specified.
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