Shaanxi KeGu New Material Technology Co., Ltd
                                                                                                           
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9 Years
Since 2017
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High-Performance Silicon Carbide Furnace Components with Extreme Temperature Resistance, Superior Mechanical Strength, and Exceptional Thermal Management

Price Negotiable
Price: 200-500 yuan/kg
MOQ: Negotiable
Delivery Time: Negotiable
Brand: KEGU
Product Description
Silicon Carbide (SiC) Furnace Components | Paddles, Boats & Tubes for Semiconductor & Solar
Our Silicon Carbide (SiC) Furnace Components provide advanced ceramic solutions for demanding semiconductor and solar manufacturing processes. Engineered to withstand extreme temperatures up to 1900°C, these high-purity components deliver superior thermal shock resistance, exceptional mechanical strength, and contamination-free performance - offering significantly longer service life and higher throughput compared to traditional quartz alternatives.
Core Product Line & Applications
  • SiC Paddle: Robust wafer boat holder for diffusion processes
  • SiC Boat: Wafer carrier for boron/phosphorus diffusion in discrete semiconductor manufacturing
  • SiC Dragon Wafer Boat: Specialized holder for high-temperature diffusion applications
  • SiC Process Tube: Critical component for diffusion furnace systems
Silicon Carbide ceramics furnace components including SiC paddle, tube, plate and boats Close-up view of high-temperature SiC furnace components for semiconductor manufacturing Various SiC furnace components arranged for industrial processing
Key Technical Advantages
  • Extreme Temperature Performance: Maintains structural integrity and chemical stability at 1900°C operating temperatures
  • Superior Mechanical Properties: High flexural strength (up to 420 MPa) prevents deformation under heavy thermal loads
  • Exceptional Thermal Management: Outstanding thermal shock resistance ensures reliability during rapid thermal cycling
  • Ultra-High Purity Construction: Resists acid/alkali corrosion, preventing wafer contamination in sensitive processes
  • Optimized Thermal Conductivity: Ensures uniform temperature distribution for consistent process results
Technical Performance Specifications
Performance Parameter UNIT HS-A HS-P HS-XA
Grain Size μm 4-10 4-10 4-10
Density g/cm³ ≥3.1 3.0-3.1 >3.1
Hardness (Knoop) Kg/mm² 2800 2800 2800
Flexural Strength @ RT MPa 385 240 420
Compressive Strength @ RT MPa 3900 - 3900
Modulus of Elasticity @ RT GPa 410 400 410
Fracture Toughness @ RT MPa*m¹/² 8 8 8
Max. Service Temp. (Air) °C 1900 1900 1900
Thermal Conductivity @ RT W/m*K 125.6 110 125.6
Primary Industrial Applications
  • Semiconductor Manufacturing: Diffusion, CVD, and high-temperature processing
  • LED Production: Epitaxial growth and wafer processing applications
  • Solar Energy: Photovoltaic cell diffusion furnace systems
  • Discrete Power Devices: Boron and phosphorus diffusion processes
Competitive Advantages
  • Quality Assurance: Rigorous quality control ensures consistent performance across all batches
  • Custom Engineering: Expertise in manufacturing components to precise customer specifications
  • Reliable Delivery: Efficient production systems designed to meet critical project timelines
  • Technical Support: Comprehensive application engineering and customer service
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Company Shaanxi KeGu New Material Technology Co., Ltd
Location 5# Chaoyang Road,Weicheng Sub-district,Qinhan New City, Xixian New Area, Xi'an Shaanxi Province,China,712039
Contact Person Yuki

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