Silicon Carbide Tray & SiC Wafer Holder with 1650°C Max Service Temp, High Thermal Conductivity, and Plasma & Corrosion Resistance for ICP Etching
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Brand:
KEGU
Product Description
Silicon Carbide (SiC) Trays & Plates: High-Performance Wafer Holders for ICP Etching in LED Manufacturing
Silicon Carbide (SiC) trays and plates are precision-engineered wafer carriers designed specifically for Inductively Coupled Plasma (ICP) etching processes within the LED industry. SiC stands out as a superior material due to its exceptional thermal management, outstanding corrosion resistance, and remarkable mechanical stability at extreme temperatures.
Key Material Advantages
- Superior Thermal Conductivity: For efficient heat dissipation and uniform temperature distribution across the wafer
- Exceptional Plasma & Corrosion Resistance: Withstands harsh chemical environments and plasma shock for extended service life
- High Mechanical Strength at Elevated Temperatures: Maintains structural integrity and dimensional stability under high thermal loads
- Low Thermal Expansion: Minimizes the risk of warping or stress on wafers during thermal cycling
Silicon Carbide (SiC) Material Properties
| Property | Value |
|---|---|
| Compound Formula | SiC |
| Molecular Weight | 40.1 |
| Appearance | Black |
| Melting Point | 2,730 °C (decomposes) |
| Density | 3.0 - 3.2 g/cm³ |
| Electrical Resistivity | 1 - 4 x 10¹ Ω*m |
| Poisson's Ratio | 0.15 - 0.21 |
| Specific Heat | 670 - 1180 J/kg*K |
Comparative Specifications: SiC Tray Types
| Type | Recrystallized SiC | Sintered SiC | Reaction Bonded SiC |
|---|---|---|---|
| Purity | > 99.5% | > 98% | > 88% |
| Max. Working Temp. | 1650 °C | 1550 °C | 1300 °C |
| Bulk Density (g/cm³) | 2.7 | 3.1 | > 3.0 |
| Apparent Porosity | < 15% | < 2.5% | < 0.1% |
| Flexural Strength (MPa) | 110 | 400 | 380 |
| Compressive Strength (MPa) | > 300 | 2200 | 2100 |
| Thermal Expansion (10⁻⁶/°C) | 4.6 (at 1200°C) | 4.0 (at <500°C) | 4.4 (at <500°C) |
| Thermal Conductivity (W/m*K) | 35 - 36 | 110 | 65 |
| Primary Characteristics | High-Temperature Resistance, High Purity | High Fracture Toughness | Excellent Chemical Resistance |
Critical Features for ICP Etching
- Excellent Thermal Conductivity: Ensures rapid heat transfer and minimizes thermal gradients
- Superior Resistance to Plasma Shock: Guarantees long-term durability and process consistency
- Excellent Temperature Uniformity: Critical for achieving uniform etch rates and high device performance across the entire wafer
Primary Applications
- Semiconductor Processing: Ideal as wafer carriers, susceptors, and process fixtures in CVD, MOCVD, and epitaxy
- LED Manufacturing: Widely used as robust and reliable wafer holders for ICP etching processes in the production of Light-Emitting Diodes
- Advanced Coatings & Components: Suitable for various industrial applications requiring high thermal and chemical stability
We supply a comprehensive range of standard and custom-sized Silicon Carbide trays, plates, and other specialized SiC components to meet the precise needs of the semiconductor and LED industries.
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Company
Shaanxi KeGu New Material Technology Co., Ltd
Location
5# Chaoyang Road,Weicheng Sub-district，Qinhan New City, Xixian New Area, Xi'an Shaanxi Province,China,712039
Contact Person
Yuki