China Black OEM Si3N4 Silicon Nitride Ceramic Structural Part with High Thermal Conductivity and Flexural Strength Customizable for Industrial Applications for sale

Black OEM Si3N4 Silicon Nitride Ceramic Structural Part with High Thermal Conductivity and Flexural Strength Customizable for Industrial Applications

Price Negotiable

Price: 200-500 yuan/kg

MOQ: Negotiable

Delivery Time: Negotiable

Brand: KEGU

Product Description

Black OEM Si3N4 Silicon Nitride Ceramics Non Standard Structural

High-performance silicon nitride ceramic materials developed for the aluminum industry offer significantly improved thermal and mechanical properties compared to similar products. The "L-shaped high thermal conductivity submerged heating appliance" represents revolutionary progress for aluminum industrial equipment.

Special structural parts requiring exceptional thermal shock resistance represent a key growth area for silicon nitride ceramic materials. In applications involving high temperatures, strong corrosion resistance, and extreme wear resistance, silicon nitride ceramics are increasingly replacing materials such as cemented carbide, alumina, zirconia, and silicon carbide.

Black OEM Si3N4 Silicon Nitride Ceramics Non Standard Structural component

Silicon Nitride Material Properties Comparison

Main component	99%Al2O3	S-SiC	ZrO2	Si3N4
Physical Properties
Density	3.9 g/cm³	3.1 g/cm³	6 g/cm³	3.2 g/cm³
Water Absorption	0%	0.1%	0%	0.1%
Sinter Temperature	1700°C	2200°C	1500°C	1800°C
Mechanical Properties
Rockwell Hardness	1700 HV	2200 HV	1300 HV	1400 HV
Bend Strength	3500 kgf/mm²	4000 kgf/mm²	9000 kgf/mm²	7000 kgf/mm²
Compression Intensity	30000 kgf/mm²	20000 kgf/mm²	20000 kgf/mm²	23000 kgf/mm²
Thermal Properties
Maximum working temperature	1500°C	1600°C	1300°C	1400°C
Thermal expansion coefficient (0-1000°C)	8.0×10⁻⁶/°C	4.1×10⁻⁶/°C (0-500°C) 5.2×10⁻⁶/°C (500-1000°C)	9.5×10⁻⁶/°C	2.0×10⁻⁶/°C (0-500°C) 4.0×10⁻⁶/°C (500-1000°C)
Thermal Shock resistance	200°C	250°C	300°C	400-500°C
Thermal Conductivity	31 W/m·K (25°C) 16 W/m·K (300°C)	100 W/m·K (25°C) 100 W/m·K (300°C)	3 W/m·K (25°C) 3 W/m·K (300°C)	25 W/m·K (25°C) 25 W/m·K (300°C)
Electrical Properties
Resistivity (Volume)	>10¹² Ω·cm (20°C) 10¹²-10¹³ Ω·cm (100°C) >10¹² Ω·cm (300°C)	10⁶-10⁸ Ω·cm (20°C)	>10¹⁰ Ω·cm (20°C)	>10¹¹ Ω·cm (20°C) >10¹¹ Ω·cm (100°C) >10¹¹ Ω·cm (300°C)
Insulation Breakdown Intensity	18 kV/mm	semiconductor	9 kV/mm	17.7 kV/mm
Dielectric Constant (1 MHz)	10 (E)	-	29	7
Dielectric Dissipation	0.4×10⁻³ (tg o)	-	-	-