Black OEM Customizable Si3N4 Silicon Nitride Ceramic with High Thermal Conductivity and High Temperature Resistance
Price:
200-500 yuan/kg
MOQ:
Negotiable
Delivery Time:
Negotiable
Brand:
KEGU
Product Description
Black OEM Non-Standard Si3N4 Silicon Nitride Ceramic
High-performance silicon nitride ceramic materials developed for the aluminum industry, offering superior thermal and mechanical properties compared to similar products. The L-shaped high thermal conductivity submerged heating appliance represents revolutionary progress for aluminum industrial equipment.
Special structural parts requiring exceptional thermal shock resistance represent a key growth area for silicon nitride ceramic materials. In high-temperature, corrosive, and high-wear applications, silicon nitride ceramics are increasingly replacing traditional materials like cemented carbide, alumina, zirconia, and silicon carbide.
Silicon Nitride Material Properties Comparison
Physical Properties
| Main component | 99%Al2O3 | S-SiC | ZrO2 | Si3N4 |
|---|---|---|---|---|
| Density (g/cm³) | 3.9 | 3.1 | 6 | 3.2 |
| Water Absorption (%) | 0 | 0.1 | 0 | 0.1 |
| Sinter Temperature (°C) | 1700 | 2200 | 1500 | 1800 |
Mechanical Properties
| Property | 99%Al2O3 | S-SiC | ZrO2 | Si3N4 |
|---|---|---|---|---|
| Rockwell Hardness (HV) | 1700 | 2200 | 1300 | 1400 |
| Bend Strength (kgf/mm²) | 3500 | 4000 | 9000 | 7000 |
| Compression Intensity (Kgf/mm²) | 30000 | 20000 | 20000 | 23000 |
Thermal Properties
| Property | 99%Al2O3 | S-SiC | ZrO2 | Si3N4 |
|---|---|---|---|---|
| Maximum working temperature (°C) | 1500 | 1600 | 1300 | 1400 |
| Thermal expansion coefficient (0-1000°C) (/°C) | 8.0×10⁻⁶ | 4.1×10⁻⁶(0-500°C) 5.2×10⁻⁶(500-1000°C) |
9.5×10⁻⁶ | 2.0×10⁻⁶(0-500°C) 4.0×10⁻⁶(500-1000°C) |
| Thermal Shock resistance T(°C) | 200 | 250 | 300 | 400-500 |
| Thermal Conductivity W/m·k | 31 (25°C) 16 (300°C) |
100 | 3 | 25 |
Electrical Properties
| Property | 99%Al2O3 | S-SiC | ZrO2 | Si3N4 |
|---|---|---|---|---|
| Resisting rate of Volume (Ω·cm) | >10¹² (20°C) 10¹²-10¹³ (100°C) >10¹² (300°C) |
10⁶-10⁸ (20°C) | >10¹⁰ (20°C) | >10¹¹ (20°C, 100°C, 300°C) |
| Insulation Breakdown Intensity (KV/mm) | 18 | semiconductor | 9 | 17.7 |
| Dielectric Constant (1 MHz) (E) | 10 | - | 29 | 7 |
| Dielectric Dissipation (tg δ) | 0.4×10⁻³ | - | - | - |
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Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Shaanxi KeGu New Material Technology Co., Ltd
Location
5# Chaoyang Road,Weicheng Sub-district，Qinhan New City, Xixian New Area, Xi'an Shaanxi Province,China,712039
Contact Person
Yuki