High speed CMOS digital isolator Broadcom HCPL 901J 000E with 2500V RMS isolation and 100 Mbaud data rate
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Product Description
Product Overview
The Broadcom HCPL-90xx and HCPL-09xx series are high-speed CMOS digital isolators designed for robust performance and excellent transient immunity. Featuring a symmetric magnetic coupling barrier, these isolators deliver industry-leading speed with a typical pulse width distortion of 2 ns, propagation delay skew of 4 ns, and a 100 Mbaud data rate. Available in single, dual, and quad-channel configurations, they offer flexible solutions for isolating data conversion devices, parallel buses, peripheral interfaces, and digital fieldbus applications. They support 3.3V and 5V TTL/CMOS logic levels and are rated for 2500V RMS isolation, with UL1577 and IEC 61010-1 approvals. These devices are specified for operation over a wide temperature range of -40C to +100C.
Product Attributes
- Brand: Broadcom
- Technology: CMOS Digital Isolators
- Certifications: UL1577, IEC 61010-1
- ESD Sensitivity: Requires normal static precautions
- Not for: or aerospace applications/environments
Technical Specifications
| Model Series | Channel Configuration | Package Type | Data Rate | Isolation Voltage (RMS) | Pulse Width Distortion (Typ.) | Propagation Delay Skew (Typ.) | Operating Temperature |
|---|---|---|---|---|---|---|---|
| HCPL-90xx / HCPL-09xx | Single | 8-pin PDIP (300 Mil), 8-pin SOIC | 100 Mbaud | 2500V | 2 ns | 4 ns | -40C to +100C |
| HCPL-90xx / HCPL-09xx | Dual (Unidirectional) | 8-pin DIP (300 Mil), 8-pin SOIC | 100 Mbaud | 2500V | 2 ns | 4 ns | -40C to +100C |
| HCPL-90xx / HCPL-09xx | Dual (Bidirectional) | 8-pin DIP (300 Mil), 8-pin SOIC | 100 Mbaud | 2500V | 2 ns | 4 ns | -40C to +100C |
| HCPL-90xx / HCPL-09xx | Quad (Unidirectional) | 16-pin SOIC Wide Body, 16-pin SOIC Narrow Body | 100 Mbaud | 2500V | 2 ns | 4 ns | -40C to +100C |
| HCPL-90xx / HCPL-09xx | Quad (2 channels one direction, 2 opposite) | 16-pin SOIC Wide Body, 16-pin SOIC Narrow Body | 100 Mbaud | 2500V | 2 ns | 4 ns | -40C to +100C |
| HCPL-90xx / HCPL-09xx | Quad (1 channel one direction, 3 opposite) | 16-pin SOIC Wide Body, 16-pin SOIC Narrow Body | 100 Mbaud | 2500V | 2 ns | 4 ns | -40C to +100C |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
|---|---|---|---|---|---|---|
| General Features | ||||||
| Pulse Width Distortion | PWD | 2 | 3 | ns | ||
| Propagation Delay Skew | tPSK | 4 | 6 | ns | ||
| Data Rate | 100 | 110 | MBd | CL = 15 pF | ||
| Common Mode Rejection | 15 | kV/s | min. | |||
| Isolation | 2500 | V RMS | ||||
| TTL/CMOS Compatibility | 3.3V, 5V | |||||
| Propagation Delay (Max.) | 15 | ns | ||||
| Electrical Specifications (5V Operation) | ||||||
| Quiescent Supply Current 1 | IDD1 | 0.012 | 0.018 | mA | VIN = 0V | |
| Quiescent Supply Current 2 | IDD2 | 5.0 | 6.0 | mA | VIN = 0V | |
| Logic Input Current | IIN | -10 | 10 | A | ||
| Logic High Output Voltage | VOH | 0.8 * VDD2 | VDD2 0.5 | V | IOUT = 4 mA, VIN = VIH | |
| Logic Low Output Voltage | VOL | 0.5 | 0.8 | V | IOUT = 4 mA, VIN = VIL | |
| Switching Specifications (5V Operation) | ||||||
| Propagation Delay (Low to High) | tPHL | 10 | 15 | ns | ||
| Propagation Delay (High to Low) | tPLH | 10 | 15 | ns | ||
| Pulse Width | tPW | 10 | ns | |||
| Output Rise Time | tR | 1 | 3 | ns | (10% to 90%) | |
| Output Fall Time | tF | 1 | 3 | ns | (10% to 90%) | |
| Channel-to-Channel Skew | tCSK | 2 | 3 | ns | (Dual and Quad Channels) | |
| Common Mode Transient Immunity | |CMH|, |CML| | 15 | 18 | kV/s | Vcm = 1000V | |
| Electrical Specifications (3.3V Operation) | ||||||
| Quiescent Supply Current 1 | IDD1 | 0.008 | 0.01 | mA | VIN = 0V | |
| Quiescent Supply Current 2 | IDD2 | 3.3 | 4.0 | mA | VIN = 0V | |
| Logic High Output Voltage | VOH | 0.8 * VDD2 | VDD2 0.5 | V | IOUT = 4 mA, VIN = VIH | |
| Logic Low Output Voltage | VOL | 0.5 | 0.8 | V | IOUT = 4 mA, VIN = VIL | |
| Switching Specifications (3.3V Operation) | ||||||
| Propagation Delay (Low to High) | tPHL | 12 | 18 | ns | ||
| Propagation Delay (High to Low) | tPLH | 12 | 18 | ns | ||
| Output Rise Time | tR | 2 | 4 | ns | (10% to 90%) | |
| Output Fall Time | tF | 2 | 4 | ns | (10% to 90%) | |
| Channel-to-Channel Skew | tCSK | 2 | 3 | ns | (Dual and Quad Channels) | |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
|---|---|---|---|---|---|---|
| Package Characteristics | ||||||
| Capacitance (Input-Output) | CI-O | pF | f = 1 MHz | |||
| Capacitance (Single Channel) | CI-O | 1.1 | pF | |||
| Capacitance (Dual Channel) | CI-O | 2.0 | pF | |||
| Capacitance (Quad Channel) | CI-O | 4.0 | pF | |||
| Barrier Resistance | >1014 | |||||
| Barrier Capacitance | 3 | pF | (Single/Dual Channel) | |||
| Barrier Capacitance | 7 | pF | (Quad Channel) | |||
| Creepage Distance (External) | mm | |||||
| Creepage Distance (8-Pin PDIP) | 7.04 | mm | ||||
| Creepage Distance (8-Pin SOIC) | 4.04 | mm | ||||
| Creepage Distance (16-Pin SOIC Narrow) | 4.03 | mm | ||||
| Creepage Distance (16-Pin SOIC Wide) | 8.08 | mm | ||||
| Leakage Current | 0.2 | A | 240 Vrms, 60 Hz | |||
| Parameter | Symbol | Min. | Max. | Unit | Test Conditions |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Storage Temperature | TS | -55 | 150 | C | |
| Ambient Operating Temperature | TA | -55 | 125 | C | (Device will not be damaged; performance not guaranteed) |
| Supply Voltage | VDD1, VDD2 | -0.5 | 7 | V | |
| Input Voltage | VIN | -0.5 | VDD1 + 0.5 | V | |
| Output Enable Voltage | VOE | -0.5 | VDD2 + 0.5 | V | (HCPL-9000/-0900) |
| Output Voltage | VOUT | -0.5 | VDD2 + 0.5 | V | |
| Output Current Drive | IOUT | 10 | mA | ||
| Lead Solder Temperature | 260 | C | (10s) | ||
| ESD (Human Body Model) | 2 | kV | |||
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
|---|---|---|---|---|---|---|
| Recommended Operating Conditions | ||||||
| Ambient Operating Temperature | TA | -40 | 100 | C | ||
| Supply Voltage | VDD1, VDD2 | 3.0 | 5.5 | V | ||
| Logic High Input Voltage | VIH | 2.4 | VDD1 | V | ||
| Logic Low Input Voltage | VIL | 0 | 0.8 | V | ||
| Input Signal Rise/Fall Times | tIR, tIF | 1 | s | |||
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina