Beijing Silk Road Enterprise Management Services Co., Ltd.
                                                                                                           
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CT MICRO CT184GB T1 4 Pin Mini Flat Phototransistor Optocoupler Suitable for Industrial Applications

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Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The CT184GB is a 4-pin Mini-Flat phototransistor optocoupler from CT Micro, designed for high-isolation applications. It features a phototransistor optically coupled to two gallium arsenide infrared-emitting diodes, offering high isolation voltage of 3750 VRMS and a wide operating temperature range of -55 C to 110 C. The device is available with multiple CTR selections and boasts a creepage distance of 5mm. Its green package and pending regulatory approvals from UL, VDE, CQC, and IEC make it suitable for demanding industrial environments. Applications include DC-DC converters, programmable controllers, telecommunication equipment, and hybrid substrates requiring high-density mounting.

Product Attributes

  • Brand: CT Micro
  • Package Type: 4-Pin Mini-Flat
  • Color: Green Package
  • Certifications (Pending Approval): UL - UL1577, VDE - EN60747-5-5, CQC GB4943.1, GB8898, IEC60065, IEC60950

Technical Specifications

Parameter Rating Unit Notes
Isolation Voltage (VISO) 3750 VRMS
Operating Temperature (TOPR) -55 ~ +110 C
Storage Temperature (TSTG) -55 ~ +150 C
Soldering Temperature (TSOL) 260 C
Total Power Dissipation (PTOT) 200 mW
Emitter Forward Current (IF) 50 mA
Emitter Peak Transient Current (IF(TRANS)) 1 A 1s P.W, 300pps
Emitter Reverse Voltage (VR) 6 V
Emitter Power Dissipation (PD) 70 mW
Detector Power Dissipation (PC) 150 mW
Collector-Emitter Breakdown Voltage (BVCEO) 80 V
Emitter-Collector Breakdown Voltage (BVECO) 7 V
Collector Current (IC) 50 mA
Forward Voltage (VF) 1.24 - 1.4 V IF = 10 mA
Reverse Current (IR) - 5 A VR = 5V
Input Capacitance (CIN) 10 - 250 pF f = 1MHz
Collector-Emitter Breakdown Voltage (BVCEO) 80 V IC = 100A
Emitter-Collector Breakdown Voltage (BVECO) 7 V IE = 100A
Collector-Emitter Dark Current (ICEO) 0.01 - 0.08 A VCE = 48V
Collector-Emitter Dark Current (ICEO) 2 - 50 A VCE = 48V, TA = 85C
Collector-Emitter Capacitance (CCE) 10 - f = 1MHz
Current Transfer Ratio (CTR) 100 - 400 % IF = 5mA, VCE = 5V
Current Transfer Ratio (CTR) 30 - % IF = 1mA, VCE = 0.4V
CTR Symmetry 0.5 - 2 - IF = 5mA, VCE = 5V
Collector-Emitter Saturation Voltage (VCE(SAT)) - 0.4 V IF = 8mA, IC = 2.4mA
Off-state collector current (IC(off)) 1 - 10 A VCE = 48V, VF = 0.7V
Isolation Resistance (RIO) 1x10^12 - 10^14 VIO = 500VDC
Isolation Capacitance (CIO) 0.5 - f=1MHz
Isolation Voltage (VISO) 3750 Vrms AC, 60s
Isolation Voltage (VISO) 10000 - AC, 1s in oil
Isolation Voltage (VISO) 10000 - DC, 60s in oil
Rise Time (tr) 5 s VCC = 10V, IC = 2mA, RL = 100
Fall Time (tf) 9 -
Turn-on time (ton) 9 -
Turn-off time (toff) 9 -
Turn-on time (ton) 2 - VCC = 5V, IF = 16mA, RL = 1.9k
Storage time (ts) 30 -
Turn-off time (toff) 70 -

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Company Beijing Silk Road Enterprise Management Services Co., Ltd.
Location 16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person Sellina

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