Phototransistor optocoupler CT MICRO CT785GR featuring gallium arsenide infrared LED and 5300 VRMS isolation voltage
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Product Description
Product Overview
The CT785 series is a DC 4-pin DIP phototransistor optocoupler, featuring a phototransistor optically coupled to a gallium arsenide infrared-emitting diode. It offers high isolation of 5300 VRMS and operates within a temperature range of -55 C to 125 C. This series is compliant with RoHS, REACH, and Halogen-free standards, and is pending approval for UL, VDE, CQC, and IEC regulatory standards. Ideal for applications such as switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces.
Product Attributes
- Brand: CT Micro
- Compliance: RoHS, REACH, Halogen Free
- Regulatory Approvals (Pending): UL - UL1577, VDE - EN60747-5-5, CQC GB4943.1, GB8898, IEC60065, IEC60950
Technical Specifications
| Parameter | Rating | Units | Notes |
|---|---|---|---|
| Absolute Maximum Rating at 25C | |||
| Isolation Voltage (VISO) | 5300 | VRMS | |
| Total Power Dissipation (PTOT) | 200 | mW | |
| Operating Temperature (TOPR) | -55 ~ +125 | C | |
| Storage Temperature (TSTG) | -55 ~ +150 | C | |
| Soldering Temperature (TSOL) | 260 | C | |
| Emitter Characteristics | |||
| Forward Current (IF) | 60 | mA | |
| Peak Transient Current (IF(TRANS)) | 1000 | mA | 1s P.W, 300pps |
| Reverse Voltage (VR) | 6 | V | |
| Emitter Power Dissipation (PD) | 100 | mW | |
| Detector Characteristics | |||
| Detector Power Dissipation (PC) | 150 | mW | |
| Collector-Emitter Breakdown Voltage (BVCEO) | 80 | V | |
| Emitter-Collector Breakdown Voltage (BVECO) | 7 | V | |
| Collector Current (IC) | 80 | mA | |
| Electrical Characteristics (TA = 25C) | |||
| Emitter Characteristics | |||
| Forward Voltage (VF) | - 1.2 1.3 | V | IF= 10mA |
| Reverse Current (IR) | - - 5 | A | VR= 6V |
| Input Capacitance (CIN) | - 10 30 | pF | f= 1MHz |
| Detector Characteristics | |||
| Collector-Emitter Breakdown Voltage (BVCEO) | 80 - - | V | IC= 100A |
| Emitter-Collector Breakdown Voltage (BVECO) | 7 - - | V | IEC= 100A |
| Collector-Emitter Dark Current (ICEO) | - - 100 | n A | VCE= 24V, IF= 0mA |
| Collector-Emitter Dark Current (ICEO) | - 50 | A | VCE= 24V, IF=0Ma , Ta=85C |
| Transfer Characteristics | |||
| Current Transfer Ratio (CTR) CT785GB | 100 600 | % | IF= 5mA, VCE= 5V |
| Current Transfer Ratio (CTR) CT785GR | 100 300 | % | IF= 5mA, VCE= 5V |
| Current Transfer Ratio (CTR) CT785BLL | 200 400 | % | IF= 5mA, VCE= 5V |
| Saturated CTR (CTR(sat)) CT785GB | - 60 - | % | IF= 1mA, VCE= 0.4V |
| Saturated CTR (CTR(sat)) CT785GR | 30 - - | % | IF= 1mA, VCE= 0.4V |
| Saturated CTR (CTR(sat)) CT785BLL | - 60 - | % | IF= 1mA, VCE= 0.4V |
| Collector-Emitter Saturation Voltage (VCE(SAT)) | - 0.2 0.4 | V | IF= 8mA, IC= 2.4mA |
| Isolation Resistance (RIO) | 5x1010 - - | VIO= 500VDC | |
| Isolation Capacitance (CIO) | - 0.25 1 | pF | f= 1MHz |
| Switching Characteristics | |||
| Rise Time (tr) | - 16 | s | IC= 2mA, VCE= 2V, RL= 100 |
| Fall Time (tf) | - 16 | s | |
| Turn-on Time (ton) | 20 | s | |
| Turn-off Time (toff) | 20 | s | |
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina