CT MICRO CTH217C V T1 4 pin half pitch mini flat phototransistor optocoupler for electronic circuits
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Product Description
Product Overview
The CTH217 Series is a general-purpose optocoupler featuring a phototransistor optically coupled to a gallium arsenide infrared-emitting diode. Housed in a 4-lead half pitch Mini-Flat package, this series offers high isolation of 3750 VRMS and a wide operating temperature range of -55 C to 125 C. It is suitable for applications requiring high density mounting, such as DC-DC converters, programmable controllers, and telecommunication equipment. The series is compliant with RoHS, REACH, and Halogen regulations, and holds multiple regulatory approvals including UL, VDE, CQC, and IEC standards.
Product Attributes
- Brand: CT Micro
- Series: CTH217 Series
- Package Type: 4-Pin Half Pitch Mini-Flat
- Output Type: Phototransistor
- Input Type: DC
- Certifications: UL - UL1577 (E364000), VDE - EN60747-5-5(VDE0884-5), CQC GB4943.1, GB8898, IEC60065, IEC60950
- Compliance: RoHS, REACH, Halogen
Technical Specifications
| Parameter | Rating | Units | Notes |
|---|---|---|---|
| Absolute Maximum Ratings (at 25C) | |||
| Isolation Voltage (VISO) | 3750 | VRMS | |
| Operating Temperature (TOPR) | -55 ~ +125 | C | |
| Storage Temperature (TSTG) | -55 ~ +150 | C | |
| Soldering Temperature (TSOL) | 260 | C | |
| Total Power Dissipation (PTOT) | 200 | mW | |
| Emitter Characteristics | |||
| Forward Current (IF) | 50 | mA | |
| Peak Transient Current (IF(TRANS)) | 1 | A | 1s P.W, 300pps |
| Reverse Voltage (VR) | 6 | V | |
| Power Dissipation (PD) | 70 | mW | |
| Detector Characteristics | |||
| Power Dissipation (PC) | 150 | mW | |
| Collector-Emitter Breakdown Voltage (BVCEO) | 80 | V | |
| Emitter-Collector Breakdown Voltage (BVECO) | 7 | V | |
| Collector Current (IC) | 50 | mA | |
| Electrical Characteristics (TA = 25C unless otherwise specified) | |||
| Forward Voltage (VF) | 1.24 / 1.4 | V | IF=10mA |
| Reverse Current (IR) | - / 5 | A | VR = 6V |
| Input Capacitance (CIN) | - / 10 / 30 | pF | f=1MHz |
| Collector-Emitter Breakdown Voltage (BVCEO) | 80 | V | IC= 0.1mA |
| Emitter-Collector Breakdown Voltage (BVECO) | 7 | V | IE= 0.1mA |
| Collector-Emitter Dark Current (ICEO) | - / - / 100 | nA | VCE= 20V, IF=0mA |
| Transfer Characteristics | |||
| Current Transfer Ratio (CTR) - CTH217 | 50 / 600 | % | IF= 5mA, VCE= 5V |
| Current Transfer Ratio (CTR) - CTH217A | 80 / 160 | % | IF= 5mA, VCE= 5V |
| Current Transfer Ratio (CTR) - CTH217B | 130 / 260 | % | IF= 5mA, VCE= 5V |
| Current Transfer Ratio (CTR) - CTH217C | 200 / 400 | % | IF= 5mA, VCE= 5V |
| Current Transfer Ratio (CTR) - CTH217D | 300 / 600 | % | IF= 5mA, VCE= 5V |
| Collector-Emitter Saturation Voltage (VCE(SAT)) | - / 0.1 / 0.2 | V | IF= 20mA, IC= 1mA |
| Isolation Resistance (RIO) | 5x1010 | VIO= 500VDC | |
| Isolation Capacitance (CIO) | 0.5 / 1 | pF | f=1MHz |
| Switching Characteristics | |||
| Rise Time (tr) | - / 6 / 18 | s | IC= 2mA, VCE= 2V, RL= 100 |
| Fall Time (tf) | - / 8 / 18 | s | |
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina