Phototransistor Optocoupler 4 Pin DIP Package CT MICRO CT816D3 SL T3 for Switch Mode Power Supplies

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Product Description

Product Overview

The CT816D3 is a DC input 4-pin phototransistor optocoupler designed for applications requiring high isolation. It features a phototransistor optically coupled to a gallium arsenide infrared-emitting diode, available in a 4-lead DIP package with various bending options. This series offers CTR flexibility and operates reliably across a wide temperature range of -55 C to 110 C, making it suitable for switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces.

Product Attributes

Brand: CT Micro
Product Type: Phototransistor Optocoupler
Input Type: DC Input
Output Type: Transistor Output
Package Type: 4-Pin DIP
Material Option: Green (G) or Non-green
Lead Frame Option: Iron (H) or Copper (None)

Technical Specifications

Parameter	Symbol	Conditions	Min	Typ	Max	Units
Absolute Maximum Ratings
Isolation Voltage	VISO				5000	VRMS
Total Power Dissipation	PTOT				200	mW
Operating Temperature	TOPR		-55		110	C
Storage Temperature	TSTG		-55		150	C
Soldering Temperature	TSOL				260	C
Emitter Characteristics
Forward Current	IF				60	mA
Peak Transient Current	IF(TRANS)	1s P.W, 300pps			1	A
Reverse Voltage	VR				6	V
Emitter Power Dissipation	PD				100	mW
Detector Characteristics
Collector-Emitter Breakdown Voltage	BVCEO		80			V
Emitter-Collector Breakdown Voltage	BVECO		6			V
Collector Current	IC				50	mA
Detector Power Dissipation	PD				150	mW
Electrical Characteristics (TA = 25C unless otherwise specified)
Forward Voltage	VF	IF=10mA		1.24	1.4	V
Reverse Current	IR	VR = 6V			5	A
Input Capacitance	CIN	f=1MHz		30		pF
Collector-Emitter Breakdown Voltage	BVCEO	IC= 100A	80			V
Emitter-Collector Breakdown Voltage	BVECO	IE= 100A	6			V
Collector-Emitter Dark Current	ICEO	VCE= 20V, IF=0mA			100	nA
Current Transfer Ratio	CTR	IF= 5mA, VCE= 5V	300		450	%
Current Transfer Ratio	CTR	IF= 0.1mA, VCE= 0.4V	10	30		%
Collector-Emitter Saturation Voltage	VCE(SAT)	IF= 20mA, IC= 1mA		0.1	0.2	V
Isolation Resistance	RIO	VIO= 500VDC	5x10¹⁰
Isolation Capacitance	CIO	f=1MHz		0.5	1	pF
Switching Characteristics
Rise Time	tr	IC= 2mA, VCE= 2V, RL= 100		6		s
Fall Time	tf			8		s