Beijing Silk Road Enterprise Management Services Co., Ltd.
                                                                                                           
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CT MICRO CT817B SL T3 H 4 pin phototransistor optocoupler DC input with various lead forming options

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Price: Negotiable
MOQ: Negotiable
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Product Description

Product Overview

The CT817 Series is a 4-pin phototransistor optocoupler featuring DC input and a transistor output. It offers high isolation of 5000 VRMS and a wide operating temperature range from -55 C to 110 C. Designed for applications requiring reliable signal isolation, this series is suitable for switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces. Various lead forming options and CTR flexibility are available to meet specific design needs.

Product Attributes

  • Brand: CT Micro
  • Product Type: DC Input 4-Pin Phototransistor Optocoupler
  • Package Type: DIP (Dual In-line Package)
  • Certifications: UL - UL1577 (E364000), VDE - EN60747-5-5(VDE0884-5), CQC GB4943.1, GB8898, IEC60065, IEC60950
  • Lead Forming Options: Standard DIP, Gullwing (400mil), Through Hole (M Type), Surface Mount (S Type), Surface Mount (Low Profile) (SL Type), Surface Mount (Gullwing) (SLM Type)
  • Material Option: Green (G) or Non-green
  • Lead Frame Option: Iron (H) or Copper (None)

Technical Specifications

Parameter Model/Type Min Typ Max Units Notes
Absolute Maximum Ratings
Isolation Voltage (AC, 1 minute) CT817 Series - - 5000 VRMS VISO
Total Power Dissipation CT817 Series - - 200 mW PTOT
Operating Temperature CT817 Series -55 - 110 C TOPR
Storage Temperature CT817 Series -55 - 150 C TSTG
Soldering Temperature CT817 Series - - 260 C TSOL
Forward Current Emitter - - 60 mA IF
Peak Transient Current (1s P.W,300pps) Emitter - - 1 A IF(TRANS)
Reverse Voltage Emitter - - 6 V VR
Emitter Power Dissipation Emitter - - 100 mW PD
Detector Power Dissipation Detector - - 150 mW PD
Collector-Emitter Breakdown Voltage Detector 35 - - V BVCEO
Emitter-Collector Breakdown Voltage Detector 6 - - V BVECO
Collector Current Detector - - 50 mA IC
Electrical Characteristics (TA = 25C unless otherwise specified)
Forward Voltage Emitter (IF=10mA) - 1.24 1.4 V VF
Reverse Current Emitter (VR = 6V) - - 5 A IR
Input Capacitance Emitter (f=1MHz) - 10 30 pF CIN
Collector-Emitter Breakdown Voltage Detector (IC= 100A) 35 - - V BVCEO
Emitter-Collector Breakdown Voltage Detector (IE= 100A) 6 - - V BVECO
Collector-Emitter Dark Current Detector (VCE= 20V, IF=0mA) - - 100 nA ICEO
Current Transfer Ratio CT817 (IF= 5mA, VCE= 5V) 50 - 600 % CTR
Current Transfer Ratio CT817A (IF= 5mA, VCE= 5V) 80 - 160 % CTR
Current Transfer Ratio CT817B (IF= 5mA, VCE= 5V) 130 - 260 % CTR
Current Transfer Ratio CT817C (IF= 5mA, VCE= 5V) 200 - 400 % CTR
Current Transfer Ratio CT817D (IF= 5mA, VCE= 5V) 300 - 600 % CTR
Collector-Emitter Saturation Voltage (IF= 20mA, IC= 1mA) - 0.1 0.2 V VCE(SAT)
Isolation Resistance (VIO= 500VDC) 5x1010 - - RIO
Isolation Capacitance (f=1MHz) - 0.25 1 pF CIO
Switching Characteristics (IC= 2mA, VCE= 2V, RL= 100)
Rise Time - - 6 18 s tr
Fall Time - - 8 18 s tf

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Have questions about our products or want to discuss a custom order? Our team is ready to help you.

Company Beijing Silk Road Enterprise Management Services Co., Ltd.
Location 16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person Sellina

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