CT MICRO CTH291GB T1 Optocoupler with Gallium Arsenide Infrared Diode and Wide Operating Temperature
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Product Description
Product Overview
The CTH291GB series is a general-purpose optocoupler featuring a phototransistor optically coupled to a gallium arsenide infrared-emitting diode. Housed in a 4-lead half pitch Mini-Flat package, this optocoupler offers high isolation of 3750 VRMS and a wide operating temperature range of -55 C to 125 C. It is suitable for applications such as switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces. The series is RoHS, REACH, and Halogen compliant, with pending regulatory approvals from UL, VDE, CQC, and IEC.
Product Attributes
- Brand: CT Micro
- Product Type: Phototransistor Optocoupler
- Package Type: Half Pitch Mini-Flat
- Compliance: RoHS, REACH, Halogen
- Regulatory Approvals (Pending): UL - UL1577, VDE - EN60747-5-5, CQC GB4943.1, GB8898, IEC60065, IEC60950
Technical Specifications
| Parameter | Rating | Units | Notes |
|---|---|---|---|
| Isolation Voltage (VISO) | 3750 | VRMS | |
| Total Power Dissipation (PTOT) | 200 | mW | |
| Operating Temperature (TOPR) | -55 ~ +125 | C | |
| Storage Temperature (TSTG) | -55 ~ +150 | C | |
| Soldering Temperature (TSOL) | 260 | C | |
| Emitter Forward Current (IF) | 60 | mA | |
| Emitter Peak Transient Current (IF(TRANS)) | 1000 | mA | 1s P.W, 300pps |
| Emitter Reverse Voltage (VR) | 6 | V | |
| Emitter Power Dissipation (PD) | 70 | mW | |
| Detector Power Dissipation (PC) | 150 | mW | |
| Collector-Emitter Breakdown Voltage (BVCEO) | 80 | V | |
| Emitter-Collector Breakdown Voltage (BVECO) | 6 | V | |
| Collector Current (IC) | 50 | mA | |
| Forward Voltage (VF) | 1.25 (Typ) | V | IF=10mA |
| Reverse Current (IR) | 5 (Max) | A | VR=6V |
| Input Capacitance (CIN) | 10 (Typ) | pF | f=1MHz |
| Collector-Emitter Breakdown Voltage (BVCEO) | 80 | V | IC=100A |
| Emitter-Collector Breakdown Voltage (BVECO) | 7 | V | IE=100A |
| Collector-Emitter Dark Current (ICEO) | 100 (Max) | nA | VCE=48V, IF=0mA |
| Collector-Emitter Dark Current (ICEO) | 50 (Max) | A | VCE=48V, Ta=85C |
| Current Transfer Ratio (CTR) | 100 - 400 | % | IF=5mA, VCE=5V |
| Collector-Emitter Saturation Voltage (VCE(SAT)) | 0.4 (Max) | V | IF=1mA, IC=0.2mA |
| Isolation Resistance (RIO) | 5x1010 | VIO=500VDC | |
| Isolation Capacitance (CIO) | 0.25 (Typ) | pF | f=1MHz |
| Rise Time (tr) | 5 (Typ) | s | IC=2mA, VCE=2V, RL=100 |
| Fall Time (tf) | 6 (Typ) | s | IC=2mA, VCE=2V, RL=100 |
| Turn-on Time (ton) | 8 (Typ) | s | IC=2mA, VCE=2V, RL=100 |
| Turn-off Time (toff) | 7 (Typ) | s | IC=2mA, VCE=2V, RL=100 |
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Company
Beijing Silk Road Enterprise Management Services Co., Ltd.
Location
16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing
Contact Person
Sellina